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HBAT-540E-TR1

Description
UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size109KB,8 Pages
ManufacturerHP(Keysight)
Websitehttp://www.semiconductor.agilent.com/
Download Datasheet Parametric View All

HBAT-540E-TR1 Overview

UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE

HBAT-540E-TR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHP(Keysight)
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW CAPACITANCE
Minimum breakdown voltage30 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum forward voltage (VF)0.8 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current1 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.43 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
High Performance Schottky
Diode for Transient Suppression
Technical Data
HBAT-5400/-5402
HBAT-540B/-540C
HBAT-540E/-540F
Features
• Ultra-low Series Resistance
for Higher Current Handling
• Low Capacitance
• Low Series Resistance
• Lead-free Option Available
Package Lead Code
Identification
(Top View)
SINGLE
3
SERIES
3
Description
The HBAT-5400 series of Schottky
diodes, commonly referred to as
clipping /clamping diodes, are
optimal for circuit and waveshape
preservation applications with
high speed switching. Low series
resistance, R
S
, makes them ideal
for protecting sensitive circuit
elements against high current
transients carried on data lines.
With picosecond switching, the
HBAT-540x can respond to noise
spikes with rise times as fast as
1 ns. Low capacitance minimizes
waveshape loss that causes signal
degradation.
Applications
RF and computer designs that
require circuit protection, high-
speed switching, and voltage
clamping.
1
0, B
2
1
2, C
2
COMMON
ANODE
3
COMMON
CATHODE
3
1
E
2
1
F
2

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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