H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
May 2007
H11G1M, H11G2M, H11G3M
High Voltage Photodarlington Optocouplers
Features
■
High BV
CEO
tm
General Description
The H11GXM series are photodarlington-type optically
coupled optocouplers. These devices have a gallium
arsenide infrared emitting diode coupled with a silicon
darlington connected phototransistor which has an inte-
gral base-emitter resistor to optimize elevated tempera-
ture characteristics.
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M
■
High sensitivity to low input current
(Min. 500% CTR at I
F
= 1mA)
■
Low leakage current at elevated temperature
(Max. 100µA at 80°C)
■
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
Applications
■
CMOS logic interface
■
Telephone ring detector
■
Low input TTL interface
■
Power supply isolation
■
Replace pulse transformer
Schematic
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
©2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
www.fairchildsemi.com
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
V
CEO
Forward Input Current
Reverse Input Voltage
Storage Temperature
Operating Temperature
Parameter
Value
-55 to +150
-40 to +100
260 for 10 sec
260
3.5
60
6.0
3.0
100
1.8
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ T
A
= 25°C
Derate Above 25°C
Forward Current – Peak (1µs pulse, 300pps)
LED Power Dissipation @ T
A
= 25°C
Derate Above 25°C
Collector-Emitter Voltage
H11G1M
H11G2M
H11G3M
100
80
55
200
2.67
V
P
D
LED Power Dissipation @ T
A
= 25°C
Derate Above 25°C
mW
mW/°C
©2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
www.fairchildsemi.com
2
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
∆
V
F
∆
T
A
BV
R
C
J
I
R
Forward Voltage
Forward Voltage
Temp. Coefficient
Reverse Breakdown
Voltage
Junction Capacitance
Reverse Leakage
Current
Breakdown Voltage
Collector to Emitter
I
R
= 10µA
V
F
= 0V, f = 1MHz
V
F
= 1V, f = 1MHz
V
R
= 3.0V
All
I
F
= 10mA
All
All
All
All
3.0
1.3
-1.8
25
50
65
0.001
10
µA
1.50
V
mV/°C
V
pF
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DETECTOR
BV
CEO
I
C
= 1.0mA, I
F
= 0
H11G1M
H11G2M
H11G3M
BV
CBO
Collector to Base
I
C
= 100µA
H11G1M
H11G2M
H11G3M
BV
EBO
I
CEO
Emitter to Base
Leakage Current
Collector to Emitter
V
CE
= 80V, I
F
= 0
V
CE
= 60V, I
F
= 0
V
CE
= 30V, I
F
= 0
V
CE
= 80V, I
F
= 0, T
A
= 80°C
V
CE
= 60V, I
F
= 0, T
A
= 80°C
All
H11G1M
H11G2M
H11G3M
H11G1M
H11G2M
100
µA
100
80
55
100
80
55
7
10
100
V
nA
V
V
Transfer Characteristics
Symbol
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
Saturation Voltage
I
F
= 10mA, V
CE
= 1V
I
F
= 1mA, V
CE
= 5V
I
F
= 16mA, I
C
= 50mA
I
F
= 1mA, I
C
= 1mA
I
F
= 20mA, I
C
= 50mA
SWITCHING TIMES
H11G1M/2M
H11G1M/2M
H11G3M
H11G1M/2M
H11G1M/2M
H11G3M
All
All
100 (1000)
5 (500)
mA (%)
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
2 (200)
0.85
0.75
0.85
5
100
1.0
1.0
1.2
V
V
CE(SAT)
t
ON
t
OFF
Turn-on Time
Turn-off Time
R
L
= 100
Ω
, I
F
= 10mA,
V
CE
= 5V, f
≤
30Hz,
Pulse Width
≤
300µs
µs
µs
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec.
V
I-O
= 500 VDC
f = 1MHz
Device
All
All
All
Min.
7500
10
11
Typ.*
Max.
Units
V
AC
PEAK
Ω
0.2
pF
*All Typical values at T
A
= 25°C
©2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
www.fairchildsemi.com
3
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Typical Performance Curves
10
100
I
C
- NORMALIZED OUTPUT CURRENT
I
C
- NORMALIZED OUTPUT CURRENT
1
Normalized to:
V
CE
= 5V
I
F
= 1mA
10
I
F
= 50mA
I
F
= 5mA
I
F
= 1mA
I
F
= 0.5mA
Normalized to:
V
CE
= 5V
I
F
= 1mA
T
A
= 25˚C
0.1
1
0.01
0.1
0.001
0.1
1
10
0.01
-60
-40
-20
0
20
40
60
80
100
120
I
F
- LED INPUT CURRENT(mA)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 1 Output Current vs. Input Current
Fig. 2 Normalized Output Current vs. Temperature
100
1000
Normalized to:
V
CE
= 5 V
I
F
= 1 mA
T
A
= 25˚C
I
C
- NORMALIZED OUTPUT CURRENT
I
CEO
- DARK CURRENT (nA)
I
F
= 50mA
I
F
= 10mA
I
F
= 2mA
100
V
CE
= 80V
10
10
V
CE
= 30V
1
I
F
= 1mA
I
F
= 0.5mA
V
CE
= 10V
1
0.1
0.1
0.01
1
10
0.01
0
10
20
30
40
50
60
70
80
90
100
V
CE
- COLLECTOR - EMITTER VOLTAGE (V)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 3 Output Current vs. Collector - Emitter Voltage
Fig. 4 Collector-Emitter Dark Current
vs. Ambient Temperature
10
I
F
- FORWARD CURRENT (mA)
R
L
= 10Ω
R
L
= 100Ω
R
L
= 1kΩ
1
Normalized to:
V
CC
= 5 V
I
F
= 10 mA
R
L
= 100
Ω
0.1
0.1
1
10
t
on
+ t
off
- TOTAL SWITCHING SPEED (NORMALIZED)
Fig. 5 Input Current vs. Total Switching Speed (Typical Values)
©2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
www.fairchildsemi.com
4
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Package Dimensions
Through Hole
0.350 (8.89)
0.320 (8.13)
Surface Mount
0.350 (8.89)
0.320 (8.13)
0.260 (6.60)
0.240 (6.10)
0.260 (6.60)
0.240 (6.10)
0.390 (9.90)
0.332 (8.43)
0.070 (1.77)
0.040 (1.02)
0.070 (1.77)
0.040 (1.02)
0.014 (0.36)
0.010 (0.25)
0.320 (8.13)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.100 (2.54)
15°
0.012 (0.30)
0.025 (0.63)
0.020 (0.51)
0.020 (0.50)
0.016 (0.41)
0.100 [2.54]
0.035 (0.88)
0.006 (0.16)
0.4" Lead Spacing
Recommended Pad Layout for
Surface Mount Leadform
0.070 (1.78)
0.350 (8.89)
0.320 (8.13)
0.260 (6.60)
0.240 (6.10)
0.060 (1.52)
0.425 (10.79)
0.070 (1.77)
0.040 (1.02)
0.014 (0.36)
0.010 (0.25)
0.100 (2.54)
0.305 (7.75)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.100 [2.54]
0.012 (0.30)
0.008 (0.21)
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters).
©2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
www.fairchildsemi.com
5
京公网安备 11010802033920号
EEWORLD
