H11B1X, H11B2X, H11B3X
H11B1, H11B2, H11B3
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
APPROVALS
l
2.54
6.4
6.2
1.54
8.8
8.4
1
2
3
Dimensions in mm
UL recognised, File No. E91231
-
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 2 available lead form :
- STD
- G form
VDE 0884 in SMD approval pending
l
SETI approved, reg. no.151786-18
DESCRIPTION
The H11B_ series of optically coupled
isolators consist of an infrared light emitting
diode and NPN silicon photodarlington in a
space efficient dual in line plastic package.
6
5
4
4.3
4.1
0.5
0.3
7.8
7.4
0.5
3.3
9.6
8.4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
-55°C to + 100°C
Operating Temperature
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
30V
50V
5V
150mW
80mA
5V
105mW
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Current Transfer Ratio
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
All electrical parameters 100% tested
l
Custom electrical selections available
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
5.08
max.
1.2
0.6
1.4
0.9
0.26
10.16
Total Power Dissipation
250mW
(derate linearly 3.3mW/°C above 25°C)
10.2
9.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92167-AAS/A2
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
H
FE
Collector-emitter Dark Current (I
CEO
)
MIN TYP MAX UNITS
1.2
3
10
30
30
5
16K
100
nA
1.5
V
V
µ
A
V
V
V
TEST CONDITION
I
F
= 10mA
I
R
= 10
µ
A
V
R
= 3V
I
C
= 1mA (note 2)
I
C
= 100
µ
A
I
E
= 100
µ
A
V
CE
= 5V, I
C
= 5mA
V
CE
= 10V
Output
Coupled
Current Transfer Ratio ( CTR )(Note 2
)
H11B1
500
H11B2
200
H11B3
100
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Output Turn on Time
Output Turn off Time
ton
toff
5300
7500
5x10
10
125
100
1.0
%
%
%
V
V
RMS
V
PK
Ω
µ
s
µ
s
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 1mA I
C
(note 1)
(note 1)
V
IO
= 500V (note 1)
V
CC
= 10V, I
C
= 10mA,
R
L
= 100
Ω
, fig.1
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
FIGURE 1
V
CC
= 10V
Input
100
Ω
I
C
= 10mA
t
r
Input
Output
Output
10%
90%
10%
90%
t
on
t
off
t
f
7/12/00
DB92167-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Current transfer ratio CTR (%)
10000
5000
1000
800
500
100
50
10
Current Transfer Ratio vs.
Forward Current
150
100
50
V
CE
= 5V
T
A
= 25°C
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
100
0
0.1 0.2 0.5
1
2
5
10 20 50 100
Forward current I
F
(mA)
Collector Current vs. Collector-emitter Voltage
100
50mA
20
Collector current I
C
(mA)
80
60
40
2mA
20
0
-30
0
25
50
75
100
125
0
1
2
3
4
5
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Collector-emitter voltage V
CE
( V )
Normalised Current Transfer
Ratio vs. Ambient Temperature
1.5
I
F
= 1mA
10mA
5mA
T
A
= 25°C
80
Forward current I
F
(mA)
CE(SAT)
60
40
20
0
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
-30
Collector-emitter saturation voltage V
I
F
= 1mA
I
C
= 1mA
Normalised current transfer ratio
I
F
= 1mA
V
CE
= 5V
1.0
0.5
0
0
25
50
75
100
-30
Ambient temperature T
A
( °C )
0
25
50
75
Ambient temperature T
A
( °C )
100
7/12/00
DB92167-AAS/A2
Embedded System
京公网安备 11010802033920号
EEWORLD
