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GT28F800F3B95

Description
512K X 16 FLASH 2.7V PROM, 95 ns, PDSO56
Categorystorage    storage   
File Size256KB,47 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric View All

GT28F800F3B95 Overview

512K X 16 FLASH 2.7V PROM, 95 ns, PDSO56

GT28F800F3B95 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionBGA, BGA56,10X6,30
Contacts56
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time95 ns
Other featuresBOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B56
JESD-609 codee0
memory density8388608 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,15
Number of terminals56
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA56,10X6,30
Package shapeRECTANGULAR
Package formGRID ARRAY
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8/3.6,3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Department size4K,32K
Maximum standby current0.00005 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
Base Number Matches1
E
n
n
n
PRODUCT PREVIEW
FAST BOOT BLOCK
FLASH MEMORY FAMILY
8 AND 16 MBIT
28F800F3, 28F160F3
Includes Extended and Automotive Temperature Specifications
High Performance
54 MHz Effective Zero Wait-State
Performance
Synchronous Burst-Mode Reads
Asynchronous Page-Mode Reads
SmartVoltage Technology
2.7 V−3.6 V Read and Write
Operations for Low Power Designs
12 V V
PP
Fast Factory Programming
Flexible I/O Voltage
1.65 V I/O Reduces Overall System
Power Consumption
5 V-Safe I/O Enables Interfacing to
5 V Devices
Enhanced Data Protection
Absolute Write Protection with
V
PP
= GND
Block Locking
Block Erase/Program Lockout
during Power Transitions
Density Upgrade Path
8- and 16-Mbit
Manufactured on ETOX™ V Flash
Technology
n
n
Supports Code Plus Data Storage
Optimized for Flash Data Integrator
(FDI) Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
Flexible Blocking Architecture
Eight 4-Kword Blocks for Data
32-Kword Main Blocks for Code
Top or Bottom Configurations
Available
Extended Cycling Capability
Minimum 10,000 Block Erase Cycles
Guaranteed
Low Power Consumption
Automatic Power Savings Mode
Decreases Power Consumption
Automated Program and Block Erase
Algorithms
Command User Interface for
Automation
Status Register for System
Feedback
Industry-Standard Packaging
56-Lead SSOP
µBGA*
CSP
n
n
n
n
n
n
n
Intel’s Fast Boot Block memory family renders high performance asynchronous page-mode and synchronous
burst reads making it an ideal memory solution for burst CPUs. Combining high read performance with the
intrinsic non-volatility of flash memory, this flash memory family eliminates the traditional redundant memory
paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory for
improved system performance. Therefore, it reduces the total memory requirement which helps increase
reliability and reduce overall system power consumption and cost.
This family of products is manufactured on Intel’s 0.4
µm
ETOX™ V process technology. They are available
in industry-standard packages: the
µBGA*
CSP, ideal for board-constrained applications, and the rugged
56-lead SSOP.
May 1998
Order Number: 290644-001
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