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GT20D201

Description
P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
CategoryDiscrete semiconductor    The transistor   
File Size163KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

GT20D201 Overview

P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

GT20D201 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum3.2 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power consumption environment180 W
Maximum power dissipation(Abs)180 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER AMPLIFIER
Transistor component materialsSILICON
VCEsat-Max3 V
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