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BDW83C

Description
Darlington Transistors 150W 15A NPN
CategoryDiscrete semiconductor    The transistor   
File Size265KB,5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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BDW83C Overview

Darlington Transistors 150W 15A NPN

BDW83C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBourns
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
G
Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
125 W at 25°C Case Temperature
15 A Continuous Collector Current
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
G
G
G
2
Minimum h
FE
of 750 at 3 V, 6 A
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDW83
BDW83A
Collector-base voltage (I
E
= 0)
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW83B
BDW83C
BDW83D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
A
2
SYMBOL
VALUE
45
60
UNIT
V
CBO
80
100
120
45
60
V
V
CEO
80
100
120
5
15
0.5
125
3.5
100
-65 to +150
-65 to +150
-65 to +150
V
V
A
A
W
W
mJ
°C
°C
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
PRODUCT
INFORMATION
1
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.

BDW83C Related Products

BDW83C BDW83C-S BDW83-S BDW83D-S BDW83D
Description Darlington Transistors 150W 15A NPN Darlington Transistors 100V 15A NPN Darlington Transistors 120V 15A NPN Darlington Transistors 120V 15A NPN Darlington Transistors 150W 15A NPN
Is it Rohs certified? incompatible - conform to conform to incompatible
Maker Bourns - Bourns Bourns Bourns
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3 3 3
Reach Compliance Code compliant - compliant compliant compliant
ECCN code EAR99 - EAR99 EAR99 EAR99
Shell connection COLLECTOR - COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A - 15 A 15 A 15 A
Collector-emitter maximum voltage 100 V - 45 V 120 V 120 V
Configuration DARLINGTON - DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 100 - 100 100 100
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN - NPN NPN NPN
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount NO - NO NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON
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