BLF871 datasheet, PDF - EEWORLD Datasheet

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BLF871: DescriptionRF MOSFET Transistors 100W, HF-1GHz; CategoryDiscrete semiconductor The transistor; File Size205KB，20 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BLF871 Overview

RF MOSFET Transistors 100W, HF-1GHz

BLF871 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts	2
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY
Collector-based maximum capacity	1 pF
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BLF871; BLF871S

UHF power LDMOS transistor

Rev. 04 — 19 November 2009

Product data sheet

1. Product profile

1.1 General description

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The

excellent ruggedness and broadband performance of this device makes it ideal for digital

transmitter applications.

Table 1.

Typical performance

RF performance at V

= 40 V in a common-source 860 MHz test circuit.

Mode of operation

CW, class AB

2-tone, class AB

DVB-T (8k OFDM)

[1]

[2]

(MHz)

860

= 860; f

= 860.1

858

L(PEP)

L(AV)

(W)

IMD3

−35

−34

[1]

PAR

(dB)

8.3

[2]

(W) (W)

100 -

100

(dB) (%) (dBc)

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

2-tone performance at 860 MHz, a drain-source voltage V

of 40 V and a quiescent

drain current I

= 0.5 A:

Peak envelope power load power = 100 W

Power gain = 21 dB

Drain efficiency = 47 %

Third order intermodulation distortion =

−35

dBc

DVB performance at 858 MHz, a drain-source voltage V

of 40 V and a quiescent

drain current I

= 0.5 A:

Average output power = 24 W

Power gain = 22 dB

Drain efficiency = 33 %

Third order intermodulation distortion =

−34

dBc (4.3 MHz from center frequency)

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