1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949588
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Rectification diode, general purpose
ORDERING INFORMATION
(Example)
DEVICE NAME
1N5627
1N5627
ORDERING CODE
1N5627-TR
1N5627-TAP
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
PARTS TABLE
PART
1N5624
1N5625
1N5626
1N5627
TYPE DIFFERENTIATION
V
R
= 200 V; I
F(AV)
= 3 A
V
R
= 400 V; I
F(AV)
= 3 A
V
R
= 600 V; I
F(AV)
= 3 A
V
R
= 800 V; I
F(AV)
= 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non repetitive
(inductive load switch off)
i
2
*t-rating
Junction and storage temperature range
TEST CONDITION
PART
1N5624
1N5625
1N5626
1N5627
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
F(AV)
P
R
E
R
i
2
*t
T
j
= T
stg
VALUE
200
400
600
800
100
18
3
1000
20
40
- 55 to + 175
UNIT
V
V
V
V
A
A
A
W
mJ
A
2
*s
°C
See electrical characteristics
t
p
= 10 ms, half sinewave
t
p
= 20 μs, half sine wave,
T
j
= 175 °C
I
(BR)R
= 1 A, T
j
= 175 °C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
25
70
UNIT
K/W
K/W
Rev. 1.6, 05-Sep-13
Document Number: 86063
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
TEST CONDITION
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100
μA,
t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, dI/d
t
= 5 A/μs, V
R
= 50 V
I
F
= 1 A, dI/d
t
= 5 A/μs
PART
SYMBOL
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
MIN.
-
-
-
-
-
-
-
-
TYP.
-
0.1
5
-
40
3.5
4.5
8
MAX.
1
1
10
1600
60
5
7.5
12
UNIT
V
μA
μA
V
pF
μs
μs
μC
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
40
I
FAV
- Average Forward Current (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
R
thJA
= 70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half
sinewave
R
thJA
= 25 K/W
l = 10 mm
RthJA - Therm. Resist.
Junction/Ambient (K/W)
30
20
l
10
l
0
0
94 9563
T
L
= constant
5
10
15
20
25
30
16393
0
20
40
60
80
100 120 140 160 180
I - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100.000
10.000
1.000
0.100
0.010
0.001
16392
1000
V
R
= V
RRM
I
R
– R everse Current ( A )
– Forward Current ( A )
T
j
=175°C
100
T
j
=25°C
10
I
F
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )
25
16394
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.6, 05-Sep-13
Document Number: 86063
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
300
P
R
– R everse Power Dissipation ( mW )
V
R
= V
RRM
C
D
– Diode Capacitance ( pF )
100
90
80
70
60
50
40
30
20
10
0
f=1MHz
250
200
150
100
50
0
25
50
75
100
125
150
175
P
R
–L imit
@ 100%V
R
P
R
–L imit
@ 80%V
R
0.1
16396
16395
T
j
– Junction Temperature (
°C
)
1.0
10.0
V
R
– R everse Voltage ( V )
100.0
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.6, 05-Sep-13
Document Number: 86063
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
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