Green
DMNH10H028SK3Q
100V 175° N-CHANNEL ENHANCEMENT MODE MOSFET
C
Product Summary
V
(BR)DSS
100V
R
DS(ON)
max
28mΩ @ V
GS
= 10V
I
D
max
T
C
= +25°
C
55A
Features
Rated to
+175°
– Ideal for High Ambient Temperature
C
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low R
DS(ON)
– Minimizes Power Losses
Low Q
g
– Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
ADVANCED INFORMATION
NEW PRODUCT
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC-DC Converters
Mechanical Data
Case: TO252
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information
(Note 5)
Part Number
DMNH10H028SK3Q-13
Notes:
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4.
Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
H1H28S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
H1H28S
YYWW
DMNH10H028SK3Q
Document number: DS38225 Rev. 1 - 2
1 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMNH10H028SK3Q
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
= 10V
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
Value
100
±20
55
39
58
2.2
29
43
Unit
V
V
A
A
A
A
mJ
ADVANCED INFORMATION
NEW PRODUCT
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
2.0
74
25
3.7
40
13
1.2
-55 to +175
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current, T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 6V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
100
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
2.5
20
0.7
2,245
173
68
1.9
36
22
7.3
9.2
6.4
5.8
17.8
4.8
35
47
Max
—
1
±100
4.0
28
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 20A
V
GS
= 0V, I
S
= 1.0A
V
DS
= 50V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 50V, I
D
= 20A
V
GS
= 10V, V
DS
= 50V,
R
G
= 3Ω, I
D
= 20A
I
F
= 20A, di/dt = 100A/μs
I
F
= 20A, di/dt = 100A/μs
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMNH10H028SK3Q
Document number: DS38225 Rev. 1 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMNH10H028SK3Q
30.0
V
GS
=4.5V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
=5.0V
V
GS
=6.0V
I
D
, DRAIN CURRENT (A)
20.0
V
GS
=8.0V
V
GS
=10.0V
15.0
V
GS
=4.0V
20
25
30
V
DS
=5V
ADVANCED INFORMATION
NEW PRODUCT
15
125℃
150℃
175℃
85℃
10.0
10
5.0
5
V
GS
=3.5V
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
2
25℃
-55℃
0.0
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.024
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
4
6
8
10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
I
D
=20A
0.022
0.02
V
GS
=10.0V
0.018
0.016
0.014
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.06
V
GS
=10V
0.05
175℃
150℃
0.04
125℃
85℃
25℃
0.02
-55℃
0.01
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
=10V, I
D
=10A
V
GS
=10V, I
D
=20A
0.03
0
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0
5
-50
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
October 2015
© Diodes Incorporated
-25
DMNH10H028SK3Q
Document number: DS38225 Rev. 1 - 2
3 of 7
www.diodes.com
DMNH10H028SK3Q
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
C
T
, JUNCTION CAPACITANCE (pF)
10000
f=1MHz
C
iss
-50
-25
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
-25
I
D
=250µA
I
D
=1mA
V
GS
=10V, I
D
=20A
ADVANCED INFORMATION
NEW PRODUCT
V
GS
=10V, I
D
=10A
25
I
S
, SOURCE CURRENT (A)
V
GS
=0V,
T
A
=85℃
V
GS
=0V,
T
A
=125℃
V
GS
=0V,
T
A
=150℃
V
GS
=0V,
T
A
=175℃
20
1000
C
oss
C
rss
15
10
V
GS
=0V,
T
A
=25℃
V
GS
=0V,
T
A
=-55℃
100
5
0
0
0.3
0.6
0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.2
10
0
10
20 30 40 50 60 70 80 90 100
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Figure 10. Typical Junction Capacitance
10
100
R
DS(ON)
Limited
P
W
=1ms
10
I
D
, DRAIN CURRENT (A)
P
W
=10ms
1
P
W
=100ms
0.1
P
W
=1s
P
W
=10s
T
J(Max)
=175℃
T
C
=25℃
DC
Single Pulse
DUT on 1*MRP board
V
GS
=20V
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
8
V
GS
(V)
6
4
V
DS
=50V, I
D
=20A
2
0.01
0
0
5
10
20
25
30
Qg (nC)
Figure 11. Gate Charge
15
35
40
0.001
DMNH10H028SK3Q
Document number: DS38225 Rev. 1 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMNH10H028SK3Q
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.9
D=0.7
ADVANCED INFORMATION
NEW PRODUCT
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
1000
10000
R
θJA
(t)=r(t) * R
θJA
R
θJA
=78°C/W
Duty Cycle, D=t1 / t2
DMNH10H028SK3Q
Document number: DS38225 Rev. 1 - 2
5 of 7
www.diodes.com
October 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
