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BAQ333-TR

Description
Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Categorysemiconductor    Discrete semiconductor   
File Size86KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BAQ333-TR Overview

Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM

BAQ333-TR Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategoryDiodes - General Purpose, Power, Switching
RoHSDetails
ProductSwitching Diodes
Mounting StyleSMD/SMT
Package / CaseMicroMELF-2
Peak Reverse Voltage30 V
Max Surge Current2 A
If - Forward Current0.2 A
ConfigurationSingle
Vf - Forward Voltage1 V
Ir - Reverse Current0.003 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.15 mm
Length1.9 mm
TypeSwitching Diode
Width1.35 mm
Factory Pack Quantity2500
Unit Weight0.000423 oz
BAQ333, BAQ334, BAQ335
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, Low Leakage Current
FEATURES
• Silicon planar diodes
• Saving space
• Hermetic sealed parts
• Fits onto SOD-323/SOT-23 footprints
• Electrical data identical with the devices BAQ33
to BAQ35, BAQ133 to BAQ135
• Very low reverse current
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
APPLICATIONS
• Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes / options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BAQ333
BAQ334
BAQ335
TYPE DIFFERENTIATION
V
RRM
= 40 V
V
RRM
= 70 V
V
RRM
= 140 V
ORDERING CODE
BAQ333-TR3 or BAQ333-TR
BAQ334-TR3 or BAQ334-TR
BAQ335-TR3 or BAQ335-TR
CIRCUIT CONFIGURATION
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
TEST CONDITION
PART
BAQ333
BAQ334
BAQ335
BAQ333
BAQ334
BAQ335
SYMBOL
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
I
FSM
I
F
VALUE
40
70
140
30
60
125
2
200
UNIT
V
V
V
V
V
V
A
mA
Reverse voltage
Peak forward surge current
Forward continuous current
t
p
= 1 μs
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
Mounted on epoxy-glass
hard tissue, fig. 4
35 μm copper clad, 0.9 mm
2
copper area per electrode
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
175
-65 to +175
UNIT
K/W
°C
°C
Rev. 2.2, 11-Jul-17
Document Number: 85538
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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