BAQ333, BAQ334, BAQ335
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, Low Leakage Current
FEATURES
• Silicon planar diodes
• Saving space
• Hermetic sealed parts
• Fits onto SOD-323/SOT-23 footprints
• Electrical data identical with the devices BAQ33
to BAQ35, BAQ133 to BAQ135
• Very low reverse current
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
APPLICATIONS
• Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes / options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BAQ333
BAQ334
BAQ335
TYPE DIFFERENTIATION
V
RRM
= 40 V
V
RRM
= 70 V
V
RRM
= 140 V
ORDERING CODE
BAQ333-TR3 or BAQ333-TR
BAQ334-TR3 or BAQ334-TR
BAQ335-TR3 or BAQ335-TR
CIRCUIT CONFIGURATION
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
TEST CONDITION
PART
BAQ333
BAQ334
BAQ335
BAQ333
BAQ334
BAQ335
SYMBOL
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
I
FSM
I
F
VALUE
40
70
140
30
60
125
2
200
UNIT
V
V
V
V
V
V
A
mA
Reverse voltage
Peak forward surge current
Forward continuous current
t
p
= 1 μs
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
Mounted on epoxy-glass
hard tissue, fig. 4
35 μm copper clad, 0.9 mm
2
copper area per electrode
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
175
-65 to +175
UNIT
K/W
°C
°C
Rev. 2.2, 11-Jul-17
Document Number: 85538
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAQ333, BAQ334, BAQ335
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 100 mA
E
≤
300 lx, rated V
R
PART
SYMBOL
V
F
I
R
I
R
BAQ333
BAQ334
BAQ335
BAQ333
BAQ334
BAQ335
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
C
D
40
70
140
3
0.5
0.5
0.5
1
MIN.
TYP.
MAX.
1
3
0.5
1
1
1
UNIT
V
nA
μA
nA
nA
nA
V
V
V
pF
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
E
≤
300 lx, rated V
R
, T
j
= 125 °C
Reverse current
E
≤
300 lx, V
R
= 15 V
E
≤
300 lx, V
R
= 30 V
E
≤
300 lx, V
R
= 60 V
Breakdown voltage
Diode capacitance
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0 V, f = 1 MHz
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10 000
0.71
1.3
1.27
V
R
= V
RRM
I
R
- Reverse Current (nA)
1000
Scattering Limit
25
0.152
9.9
24
100
0.355
1
0
94 9079
10
10
2.5
40
80
120
160
200
95 10329
T
j
- Junction Temperature (°C)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 3 - Board for R
thJA
Definition (in mm)
1000
T
j
= 25 °C
100
Scattering Limit
10
I
F
- Forward Current (mA)
1
0.1
0
94 9078
0.4
0.8
1.2
1.6
2.0
V
F
- Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 2.2, 11-Jul-17
Document Number: 85538
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAQ333, BAQ334, BAQ335
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
MicroMELF
Cathode indification
1 (0.039)
surface plan
Vishay Semiconductors
1.2 (0.047)
1.1 (0.043)
*
2 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
> R2.5 (0.098)
glass
*
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
Reflow soldering
2.4 (0.094)
0.8 (0.031)
0.8 (0.031)
0.9 (0.035)
Wave soldering
2.8 (0.110)
0.9 (0.035)
1.2 (0.047)
0.8 (0.031)
1 (0.039)
Created - Date: 26.July.1996
Rev. 13 - Date: 07.June.2006
Document no.:6.560-5007.01-4
96 12072
Rev. 2.2, 11-Jul-17
Document Number: 85538
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.4 (0.055)
0.6 (0.024)
surface plan
1.
3
<
gl
5
(
as
0.0
s
53
)
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www.vishay.com
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Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000