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SMUN5212T1G

Description
Bipolar Transistors - Pre-Biased SS BRT NPN 50V PB FR
CategoryDiscrete semiconductor    The transistor   
File Size126KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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SMUN5212T1G Overview

Bipolar Transistors - Pre-Biased SS BRT NPN 50V PB FR

SMUN5212T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Contacts3
Manufacturer packaging code419-04
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionDigital Transistors (BRT)
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)60
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.31 W
surface mountYES
Terminal surfaceTin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
MUN2212, MMUN2212L,
MUN5212, DTC124EE,
DTC124EM3, NSBC124EF3
Digital Transistors (BRT)
R1 = 22 kW, R2 = 22 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
PIN 1
BASE
(INPUT)
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
XX MG
G
1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
XX M
1
XM 1
XXX
M
G
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
1
October, 2016 − Rev. 3
Publication Order Number:
DTC124E/D

SMUN5212T1G Related Products

SMUN5212T1G DTC124EM3T5G NSVMMUN2212LT1G
Description Bipolar Transistors - Pre-Biased SS BRT NPN 50V PB FR Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN Bipolar Transistors - Pre-Biased SS SOT23 BR XSTR NPN 50V
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free
Contacts 3 3 3
Manufacturer packaging code 419-04 631AA 318-08
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 1 week 2 weeks 1 week
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 60 60 60
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.31 W 0.6 W 0.4 W
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Transistor component materials SILICON SILICON SILICON
Maker ON Semiconductor ON Semiconductor -
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 -
Maximum time at peak reflow temperature NOT SPECIFIED 40 -
Base Number Matches - 1 1

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