NOT RECOMMENDED FOR NEW DESIGN
USE
DMP2120U
DMP2160U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
75mΩ @ V
GS
= -4.5V
-20V
140mΩ @ V
GS
= -1.8V
-2.4A
I
D
max
T
A
= +25°C
-3.3A
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(th)
≤ 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q 101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
D r a in
SOT23
D
G a te
S o u rce
G
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMP2160U-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
D F
M
DMF = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
Shanghai A/T Site
2009
W
Mar
3
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
YM
DMP2160U
Document number: DS31586 Rev. 9 - 3
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DMP2160U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -4.5V
Pulsed Drain Current
T
A
= +25C
T
A
= +70C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-20
±12
-3.3
-2.6
-13
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.4
90
22
-55 to +150
Units
W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-20
-0.4
Typ
-0.6
60
73
92
7
627
64
53
44.9
6.5
0.9
1.5
12.5
10.3
46.5
22.2
Max
-1.0
100
800
-0.9
75
96
140
-1.0
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -16V, V
GS
= 0V
V
GS
=
8V,
V
DS
= 0V
V
GS
=
12V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -2.5V, I
D
= -1.2A
V
GS
= -1.8V, I
D
= -1.2A
V
DS
= -10V, I
D
= -1.5A
V
GS
= 0V, I
S
= -1.0A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
V
GS
= -4.5V, V
DS
= -10V, I
D
= -3A
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10Ω, R
G
= 1.0Ω, I
D
= -1A
5. Device mounted on 1in
2
FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMP2160U
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10
V
GS
= 3.0V
10
V
DS
= -5V
8
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
V
GS
= 3.0V
V
GS
= 2.5V
8
-I
D
, DRAIN CURRENT (A)
6
V
GS
= 2.0V
6
4
V
GS
= 1.5V
4
2
2
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0
0
0.5
1
1.5
2
2.5
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
1.6
1,200
f = 1MHz
V
GS
= 0V
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
V
GS
= -2.5V
I
D
= -2A
1,000
C, CAPACITANCE (pF)
800
1.2
V
GS
= -4.5V
I
D
= -4.5A
600
C
iss
1.0
400
0.8
200
C
rss
C
oss
0.6
-50
0
0
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance Variation with Temperature
10
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Capacitance
4
20
1
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
I
D
= 250µA
I
D
= 1mA
-I
S
, SOURCE CURRENT (A)
8
6
4
T
A
= 25°C
0.4
0.3
0.2
-50
2
0
0
0.2 0.4 0.6 0.8
1
1.2
1.4
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 6 Diode Forward Voltage vs. Current
1.6
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
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1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
R
JA
(t) = r(t) * R
JA
R
JA
= 338°C/W
P(pk)
0.01
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, PULSE DURATION TIME (s)
Fig. 7 Transient Thermal Response
100
1,000
10,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
J
All 7°
GAUGE PLANE
0.25
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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