4 to 1 analog multiplexer designed for high performance
switching of analog and video signals. Combining low power;
fast switching; low on-resistance, flatness and matching; and
small physical size, the DG2034 is ideal for portable and
battery applications.
Built on Vishay Siliconix’s low voltage CMOS process, the
DG2034 has an epitaxial layer which prevents latchup.
Break-before-make is guaranteed.
FEATURES
•
Low voltage operation (1.8 V to 5.5 V)
•
•
•
•
Low on-resistance - r
DS(on)
: 4
Ω
Off-isolation and crosstalk: - 55 dB at 10 MHz
Fast switch - 25 ns t
ON
Low charge injection - Q
INJ
: 4.7 pC
RoHS
COMPLIANT
•
Low power consumption - 4 µW
BENEFITS
•
•
•
•
•
High accuracy
High bandwidth
TTL and low voltage logic compatibility
Low power consumption
Reduced PCB space
APPLICATIONS
•
•
•
•
•
Mixed signal routing
Portable and battery operated systems
Low voltage data acquisition
Modems
PCMCIA cards
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
12-Pin QFN (3 x 3 mm)
A0
12
NC
11
Logic
S1
1
9
S2
A0
S1
GND
2
8
COM
GND
S3
EN
4
EN
5
NC
Top View
6
V+
1
2
3
4
5
Top View
Logic
10
9
8
7
6
A1
S2
COM
S4
V+
A1
10
MSOP-10
S3
3
7
S4
TRUTH TABLE
A1
X
0
0
1
1
A0
X
0
1
0
1
EN
0
1
1
1
1
ON Switch
None
S1
S2
S3
S4
ORDERING INFORMATION
Temp Range
- 40 °C to 85 °C
Package
MSOP-10
12-pin QFN (3 x 3 mm)
Part Number
DG2034DQ-T1-E3
DG2034DN-T1-E4
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
www.vishay.com
1
DG2034
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Referenced V+ to GND
A
X
, E
N
, S
X
, COM
a
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 50
± 100
QFN-12 (3 x 3 mm)
c
MSOP-10
d
1295
320
Unit
V
mA
mW
Continuous Current (Any Terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Power Dissipation
(Packags)
b
Storage Temperature (D Suffix)
- 65 to 150
°C
Notes:
a. Signals on S
X
, D
X
, EN or A
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 16.2 mV/°C above 70 °C.
d. Derate 4.0 mV/°C above 70 °C.
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
AL
= 0.4 V, V
AH
= 1.5 V
e
Limits
- 40 to 85 °C
Temp.
a
Full
Room
Full
V+ = 2.7 V, V
COM
= 0.5 V/1.5 V/2.0 V
I
S
= 10 mA
Room
Room
V+ = 3.3 V, V
S
= 1 V/3 V
V
COM
= 3 V/1 V, V
EN
= 0 V
V+ = 3.3 V
V
COM
= V
S
= 1 V/3 V
V
A/EN
= 0 or V+, See Truth Table
Room
Full
Room
Full
Room
Full
Full
Full
Full
Room
Full
V
S
= 1.5 V, R
L
= 300
Ω
Room
Full
Room
V
S
= 1.5 V/0 V, V
S
= 0 V/1.5 V, R
L
= 300
Ω
C
L
= 1 nF, V
gen
= 0 V, R
gen
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF
R
L
= 50
Ω,
C
L
= 5 pF
f = 1 MHz
f = 10 MHz
f = 1 MHz
f = 10 MHz
Room
Full
Room
Room
Room
Room
Room
Room
V+ = 2.7 V, f = 1 MHz
Room
Room
2.7
V+ = 3.3 V, V
A/EN
= 0 or 3.3 V, See Truth Table
Full
25
15
10.5
30
- 4.7
- 73
- 54
- 77
- 59
14
46
67
3.3
1.0
V
µA
pF
dB
45
55
pC
-1
- 10
-1
- 10
-1
- 10
- 1.0
1.5
0.4
35
45
25
35
ns
Min.
c
0
4
0.1
0.3
0.3
0.3
0.3
Typ.
b
Max.
c
V+
7
9
0.3
1.5
1
10
1
10
1
10
1.0
µA
V
nA
Ω
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
r
ON
Match
r
ON
Flatness
d,f
Off Leakage Current
g
COM Off Leakage Current
g
Channel-On Leakage Current
g
Digital Control
Input Current
d
Input High Voltage
d
Input Low Voltage
d
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
d
Transition Time
Charge Injection
d
Off-Isolation
d
Channel-to-Channel Crosstalk
d
Off Capacitance
d
COM Off Capacitance
d
COM On Capacitance
d
Power Supply
Power Supply Range
Power Supply Current
www.vishay.com
2
d
Symbol
V
ANALOG
r
ON
Δr
ON
r
ON
Flatness
I
S(off)
I
COM(off)
I
COM(on)
I
A
or I
EN
V
AH
or V
ENH
V
AL
or V
ENL
t
ON
t
OFF
t
D
t
trans
Q
INJ
OIRR
X
TALK
C
S(off)
C
COM(off)
C
COM(on)
V+
I+
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
DG2034
Vishay Siliconix
SPECIFICATIONS
(V+ = 5 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
AL
= 0.8 V or V
AH
= 2.4 V
e
Limits
- 40 to 85 °C
Temp.
a
Full
Room
Full
V+ = 4.5 V, V
COM
= 1.5 V/2.5 V/3.5 V
I
S
= 10 mA
Room
Room
V+ = 5.5 V, V
S
= 1 V/4.5 V
V
COM
= 4.5 V/1 V, V
EN
= 0 V
V+ = 5.5 V, V
COM
= V
S
= 1 V/4.5 V
Room
Full
Room
Full
Room
Full
Full
Full
Full
Room
Full
V
S
= 3.0 V, R
L
= 300
Ω
Room
Full
Room
V
S
= 3 V/0 V, V
S
= 0 V/3 V, R
L
= 300
Ω
R
L
= 50
Ω,
C
L
= 5 p
R
L
= 50
Ω,
C
L
= 5 pF
f = 1 MHz
f = 10 MHz
f = 1 MHz
f = 10 MHz
Room
Full
Room
Room
Room
Room
Room
Room
V+ = 5 V, f = 1 MHz
Room
Room
4.5
V+ = 5.5 V, V
A/EN
= 0 or 5.5 V, See Truth Table
Full
18
12
10.5
25
- 73
- 53.5
- 77
- 60.2
- 4.4
13
43
64
5.5
1.0
V
µA
pF
pC
dB
40
50
-1
- 10
-1
- 10
-1
- 10
- 1.0
2.4
0.8
30
40
20
30
ns
Min.
c
0
3
0.16
0.6
0.5
0.5
0.5
Typ.
b
Max.
c
V+
5.5
7
0.5
1.5
1
10
1
10
1
10
1.0
µA
V
nA
Ω
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
r
ON
Match
r
ON
Flatness
d,f
Off Leakage Current
COM Off Leakage Current
Channel-On Leakage Current
Digital Control
Input Current
d
Input High Voltage
d
Input Low Voltage
d
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
d
Transition Time
Off-Isolation
d
Channel-to-Channel Crosstalk
Charge Injection
d
Off Capacitance
d
COM Off Capacitance
d
COM On Capacitance
d
Power Supply
Power Supply Range
Power Supply Current
d
Symbol
V
ANALOG
r
ON
Δr
ON
r
ON
Flatness
I
S(off)
I
COM(off)
I
COM(on)
I
AH
or I
ENH
V
AH
or V
ENH
V
AL
or V
ENL
V
A
or V
EN
= 0 or V+, See Truth Table
t
ON
t
OFF
t
D
t
trans
OIRR
X
TALK
Q
INJ
C
S(off)
C
COM(off)
C
COM(on)
V+
I+
C
L
= 1 nF, V
gen
= 0 V, R
gen
= 0
Ω
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, not subjected to production test.
e. V
A
, E
N
= input voltage to perform proper function.
f. Difference of min and max values.
g. Guaranteed by 5 V testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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