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DEMD48-7

Description
Bipolar Transistors - Pre-Biased 300mW +/-100mA
CategoryDiscrete semiconductor    The transistor   
File Size210KB,4 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DEMD48-7 Overview

Bipolar Transistors - Pre-Biased 300mW +/-100mA

DEMD48-7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time19 weeks
Other featuresBUILT IN BAIS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
DEMD48
DUAL NPN/PNP PRE-BIASED TRANSISTOR
Features
Epitaxial Planar Die Construction
Surface Mount Package Suited for Automated Assembly
Simplifies Circuit Design and Reduces Board Space
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-563
NEW PRODUCT
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin Finish annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.005 grams (approximate)
Reference
Q
1
Q
2
Device Type
NPN
PNP
R1(Nom)
47kΩ
2.2 kΩ
R2(Nom)
47kΩ
47kΩ
6
5
R
2
47k
R
1
4
Q
1
R
1
47k
R
2
47k
2.2k
Q
2
1
2
3
Maximum Ratings, Total Device
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Maximum Ratings, Pre-Biased NPN Transistor, Q
1
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Input Voltage
Output Current (DC)
Peak Collector Current
@T
A
= 25°C unless otherwise specified
Value
50
50
10
-10 to +40
100
100
Unit
V
V
V
V
mA
mA
Symbol
V
CBO
V
CEO
V
EBO
V
IN
I
O
I
CM
Maximum Ratings, Pre-Biased PNP Transistor, Q
2
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Input Voltage
Output Current (DC)
Peak Collector Current
Notes:
@T
A
= 25°C unless otherwise specified
Value
-50
-50
-10
-12 to +5
-100
-100
Unit
V
V
V
V
mA
mA
Symbol
V
CBO
V
CEO
V
EBO
V
IN
I
O
I
CM
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
DS31224 Rev. 4 - 2
1 of 4
www.diodes.com
DEMD48
© Diodes Incorporated
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