DZ23-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
3
• Dual silicon planar Zener diodes, common
cathode
• The Zener voltages are graded according to
the international E24 standard. Standard
Zener voltage tolerance is ± 5 %.
Available
1
2
• The parameters are valid for both diodes in
one case.
V
Z
and
R
zj
of the two diodes in
one case is
5 %
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.7 to 51
5
Pulse current
Dual common cathode
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
DZ23C2V7-E3-08 to DZ23C51-E3-08
DZ23-series
DZ23C2V7-HE3-08 to DZ23C51-HE3-08
DZ23C2V7-E3-18 to DZ23C51-E3-18
DZ23C2V7-HE3-18 to DZ23C51-HE3-18
TAPED UNITS PER REEL
3000 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
15 000
10 000 (8 mm tape on 13" reel)
10 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Thermal resistance,
junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Zener current
TEST CONDITION
Device on fiberglass substrate,
see layout on page 6
Device on fiberglass substrate,
see layout on page 6
SYMBOL
P
tot
R
thJA
T
j
T
stg
T
op
I
Z
VALUE
300
420
150
-65 to +150
-55 to +150
P
tot
/V
Z
UNIT
mW
K/W
°C
°C
°C
mA
Rev. 2.0, 08-Nov-16
Document Number: 85765
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DZ23-Series
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
MAX.
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
MAX.
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT1
10
-4
/°C
MIN.
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
DZ23C2V7
DZ23C3V0
DZ23C3V3
DZ23C3V6
DZ23C3V9
DZ23C4V3
DZ23C4V7
DZ23C5V1
DZ23C5V6
DZ23C6V2
DZ23C6V8
DZ23C7V5
DZ23C8V2
DZ23C9V1
DZ23C10
DZ23C11
DZ23C12
DZ23C13
DZ23C15
DZ23C16
DZ23C18
DZ23C20
DZ23C22
DZ23C24
DZ23C27
DZ23C30
DZ23C33
DZ23C36
DZ23C39
DZ23C43
DZ23C47
DZ23C51
V1
V2
V3
V4
V5
V6
V7
V8
V9
V10
V11
V12
V13
V14
V15
V16
V17
V18
V19
V20
V21
V22
V23
V24
V25
V26
V27
V28
V29
V30
V31
V32
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
MAX.
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
nA
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 2.0, 08-Nov-16
Document Number: 85765
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DZ23-Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
mA
10
3
10
2
Ω
100
T
J
= 25 °C
5
4
I
F
10
1
10
-1
10
-2
T
J
= 100 °C
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
T
J
= 25 °C
10
5
4
3
2
10
-3
10
-4
10
-5
0
18114
1
0.2
0.4
0.6
0.8
1V
0.1
18119
2
5
1
2
5
V
F
10
I
Z
2
5
100 mA
Fig. 1 -
Forward Characteristics
Fig. 4 -
Dynamic Resistance
vs.
Zener Current
mW
500
Ω
10
3
7
T
j
= 25 °C
400
5
4
P
tot
300
200
R
zj
3
2
47 + 51
43
39
36
10
2
7
5
4
3
2
100
0
0
18115
100
200 °C
10
0.1
18120
2
3
4 5
1
2
3 4 5
T
amb
I
Z
10
mA
Fig. 2 -
Admissible Power Dissipation
vs.
Ambient Temperature
Fig. 5 -
Dynamic Resistance
vs.
Zener Current
Ω
1000
5
4
3
2
Ω
10
3
T
J
= 25 °C
5
4
3
2
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
r
zj
R
zth
10
2
100
5
4
3
2
5
4
3
2
10
5
4
3
2
2.7
3.6
4.7
5.1
5.6
10
5
4
3
2
negative
positive
1
0.1
18117
2
5
1
1
18121
2
3
4 5
1
2
5
10
I
Z
2
5
100 mA
10
2
3 4 5
100
V
V
Z
at I
Z
= 5 mA
Fig. 3 -
Dynamic Resistance
vs.
Zener Current
Fig. 6 -
Thermal Differential Resistance
vs.
Zener Voltage
Rev. 2.0, 08-Nov-16
Document Number: 85765
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DZ23-Series
www.vishay.com
Vishay Semiconductors
Ω
100
7
5
4
mV/°C
100
I
Z
= 5 mA
R
zj
3
2
Δ
V
Z
Δ
T
j
80
60
10
7
5
4
3
2
40
20
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
1
10
2
3 4 5
100
V
0
0
18125
20
40
60
80
100
V
18122
V
Z
V
Z
Fig. 7 -
Dynamic Resistance
vs.
Zener Voltage
Fig. 10 -
Temperature Dependence of Zener Voltage
vs.
Zener Voltage
mV/°C
25
20
15
10
5
0
-5
1
18123
2
3
4 5
V
9
8
5 mA
I
Z
= 1 mA
20 mA
7
Δ
V
Z
Δ
T
j
Δ
V
Z
6
5
4
3
2
1
0
51
43
36
10
2
3 4 5
100
V
-1
0
18126
I
Z
= 2 mA
20
40
60
80 100 120
T
j
140 °C
V
Z
Fig. 8 -
Temperature Dependence of Zener Voltage
vs.
Zener Voltage
Fig. 11 -
Change of Zener Voltage
vs.
Junction Temperature
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Fig. 9 -
Change of Zener Voltage
vs.
Junction Temperature
Fig. 12 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium
vs.
Zener
voltage
Rev. 2.0, 08-Nov-16
Document Number: 85765
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DZ23-Series
www.vishay.com
Vishay Semiconductors
V
5
mA
30
Δ
V
Z
= R
zth
x I
Z
l
Z
10
12
T
j
= 25 °C
4
Δ
V
Z
3
I
Z
= 5 mA
20
15
18
22
2
1
Test
10 current
I
Z
5 mA
27
33 36
I
Z
= 2 mA
0
0
18112
0
0
18128
20
40
60
80
100
V
10
20
V
Z
30
40
V
V
Z
Fig. 13 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium
vs.
Zener
voltage
Fig. 15 -
Breakdown Characteristics
mA
50
T
j
= 25 °C
mA
10
2.7
3.9 5.6
3.3 4.7
6.8
8.2
8
l
Z
6
Test
current
I
Z
5 mA
39
43
51
47
T
j
= 25 °C
40
l
Z
30
20
Test
current
I
Z
5 mA
4
10
0
0
18111
2
0
1
2
3
4
5
6
V
Z
7
8
9 10
V
18113
0
10 20 30 40 50 60 70 80 90 100
V
V
Z
Fig. 14 -
Breakdown Characteristics
Fig. 16 -
Breakdown Characteristics
LAYOUT FOR R
thJA
TEST
Thickness: fiberglass 0.059" (1.5 mm)
Copper leads 0.012" (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Rev. 2.0, 08-Nov-16
Document Number: 85765
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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