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MRF448

Description
RF Bipolar Transistors RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size31KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
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MRF448 Overview

RF Bipolar Transistors RF Transistor

MRF448 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionFLANGE MOUNT, O-CRFM-F4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)12 A
Collector-emitter maximum voltage55 V
ConfigurationSingle
Minimum DC current gain (hFE)15
highest frequency bandHIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)320 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MRF448
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
MRF448
is Designed for
High Linearity Class AB HF Power Amplifier
Applications up to 30 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
L
FEATURES:
P
G
= 14 dB Typical at 220 W/30 MHz
IMD
3
= -32 dBc Typ. at 220 W
(PEP)
Omnigold™
Metalization System
C
B
E
C
Ø.125 NOM.
B
E
H
D
G
F
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
16 A
100 V
50 V
4.0 V
290 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.6 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
.980 / 24.89
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.245 / 6.22
.720 / 18.28
.125 / 3.18
MINIMUM
inches / mm
I J
K
MAXIMUM
inches / mm
.220 / 5.59
.125 / 3.18
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10866
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
CES
h
FE
C
ob
G
P
η
C
IMD
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 200 mA
I
E
= 10 mA
V
CE
= 30 V
V
CE
= 50 V
V
CE
= 10 V
V
CB
= 50 V
I
C
= 5.0 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
100
50
4.0
5
10
10
350
12
65
-33
45
-30
450
UNITS
V
V
V
mA
mA
---
pF
dB
%
dB
%
V
CE
= 50 V
V
CE
= 50 V
I
CQ
=250 mA
I
CQ
=250 mA
P
OUT
= 250 W
(CW)
P
OUT
= 250 W
(PEP)
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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