• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAK SC-70-6L-Single
1
D
2
D
3
6
D
5
D
S
4
S
2.05 mm
G
APPLICATIONS
• Portable Devices such as Smart Phones,
Tablet PCs and Mobile Computing
- Load Switch
- Power Management
- Input Protection Switch (over
voltage, reverse voltage)
Marking Code
B2X
Part # code
XXX
S
G
2.05 mm
Ordering Information:
SiA453EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
Lot Traceability
and Date code
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Avalanche Current
Single Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
- 30
± 12
- 24
- 19
- 10
b, c
- 8
b, c
- 80
- 16
- 2.9
b, c
- 10
5
19
12
3.5
b, c
2.2
b, c
- 50 to 150
260
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
b, f
t
5s
Steady State
Maximum Junction-to-Case (Drain)
Symbol
R
thJA
R
thJC
Typical
28
5.3
Maximum
36
6.5
Unit
°C/W
Notes
a. T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S13-1271-Rev. A, 27-May-13
Document Number: 62864
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 μA
I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 5 A
V
GS
= - 3.7 V, I
D
= - 5 A
V
GS
= - 2.5 V, I
D
= - 2 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 9 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= - 9 A, V
GS
= 0 V
- 0.85
22
20
16
6
T
C
= 25 °C
- 16
- 80
- 1.2
45
40
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 1.7
I
D
- 9 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 1.7
I
D
- 9 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
1.8
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 11 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 11 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
1900
160
145
44
21
3.9
5.9
9
25
45
65
28
10
5
90
25
18
50
90
130
55
20
10
180
50
ns
66
32
nC
pF
g
fs
V
GS
= - 15 V, I
D
= - 5 A
- 10
0.0150
0.0185
0.0205
0.0290
22
0.0185
0.0235
0.0260
0.0377
S
- 0.6
- 30
- 21
3.1
- 1.4
±4
± 0.5
-1
- 10
A
μA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1271-Rev. A, 27-May-13
Document Number: 62864
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
10
-2
10
-3
16
I
GSS
-
Gate
Current (mA)
I
GSS
-
Gate
Current (A)
10
-4
10
-5
10
-6
10
-7
10
-8
0
0
4
8
12
16
20
V
GS
-
Gate-Source
Voltage (V)
10
-9
0
4
8
12
16
20
V
GS
-
Gate-to-Source
Voltage (V)
T
J
= 25
°C
T
J
= 150
°C
Vishay Siliconix
12
T
J
= 25
°C
8
4
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-to-Source Voltage
80
V
GS
= 10 V thru 5 V
V
GS
= 4 V
20
16
I
D
- Drain Current (A)
60
I
D
- Drain Current (A)
12
40
V
GS
= 3 V
8
T
C
= 25
°C
20
4
T
C
= 125
°C
T
C
= - 55
°C
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.060
V
GS
= 2.5 V
0.050
R
DS(on)
- On-Resistance (Ω)
3000
2500
0.040
V
GS
= 3.7 V
V
GS
= 4.5 V
C - Capacitance (pF)
2000
C
iss
0.030
1500
0.020
1000
0.010
V
GS
= 10 V
500
C
rss
0
5
C
oss
0.000
0
20
40
I
D
- Drain Current (A)
60
80
0
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
S13-1271-Rev. A, 27-May-13
Capacitance
Document Number: 62864
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
= 2.5 V
I
D
= 5 A
V
GS
= 10 V
V
GS
= 4.5 V, 3.7 V
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 11 A
V
DS
= 10 V
6
V
DS
= 5 V
4
V
DS
= 16 V
2
0
0
10
20
30
40
50
Q
g
- Total
Gate
Charge (nC)
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.050
T
J
= 150
°C
10
T
J
= 25
°C
R
DS(on)
- On-Resistance (Ω)
0.040
I
D
= 5 A
I
S
-
Source
Current (A)
0.030
T
J
= 125
°C
0.020
T
J
= 25
°C
0.010
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.1
1.0
0.9
30
25
20
0.8
0.7
0.6
0.5
0.4
- 50
- 25
0
25
50
75
100
125
150
I
D
= 250 μA
Power (W)
V
GS(th)
(V)
15
10
5
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
S13-1271-Rev. A, 27-May-13
Single Pulse Power, Junction-to-Ambient
Document Number: 62864
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Limited by R
DS(on)
*
Vishay Siliconix
10
I
D
- Drain Current (A)
100
µs
1 ms
1
10 ms
100 ms
10
s
1
s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
0.1
T
A
= 25
°C
Safe Operating Area, Junction-to-Ambient
30
20
25
20
15
Power Dissipation (W)
0
25
50
75
100
125
150
15
I
D
- Drain Current (A)
10
10
5
5
0
T
C
- Case Temperature (°C)
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1271-Rev. A, 27-May-13
Document Number: 62864
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
EEWORLD
