DSC2501
Features
Silicon NPN epitaxial planar type
For low frequency amplification
Unit: mm
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: E3
Packaging
DSC2501×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
opr
T
stg
Rating
25
20
12
0.5
1
200
150
–40 to +85
–55 to +150
Unit
V
V
V
A
A
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
Mini3-G3-B-B
SC-59A
TO-236AA/SOT-23
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistance
*3
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
Conditions
I
C
= 10
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 25 V, I
E
= 0
V
CE
= 2 V, I
C
= 0.5 A
I
C
= 0.5 A, I
B
= 20 mA
I
C
= 0.5 A, I
B
= 50 mA
V
CE
= 10 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
25
20
12
Typ
Max
Unit
V
V
V
100
200
0.18
150
6
1.0
800
0.40
1.2
nA
V
V
MHz
pF
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
Rank
h
FE
Marking Symbol
R
R
200 to 350
E3R
S
S
300 to 500
E3S
T
T
400 to 800
E3T
0
No-rank
200 to 800
E3
Product of no-rank is not classified and have no marking symbol for rank.
1 kΩ
*3: R
on
measurement circuit
f
=
1 kHz
V
=
0.3 V
V
B
V
V
V
A
R
on
=
V
B
×
1 000
(Ω)
V
A
−
V
B
Publication date: February 2014
Ver. BED
1
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semiconductors described in this book
(1)
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Consult our sales staff in advance for information on the following applications:
–
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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