MCP1406/07
6A High-Speed Power MOSFET Drivers
Features
• High Peak Output Current: 6.0A (typical)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2500 pF in 20 ns
- 6800 pF in 40 ns
• Short Delay Times: 40 ns (typical)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typical)
- With Logic ‘0’ Input – 35 µA (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up to 5V
• Pin compatible with the TC4420/TC4429 devices
• Space-saving 8-Pin SOIC, PDIP and 8-Pin 6x5
DFN Packages
General Description
The MCP1406/07 devices are a family of buffers/
MOSFET drivers that feature a single-output with 6A
peak drive current capability, low shoot-through
current, matched rise/fall times and propagation delay
times. These devices are pin-compatible and are
improved versions of the TC4420/TC4429 MOSFET
drivers.
The MCP1406/07 MOSFET drivers can easily charge
and discharge 2500 pF gate capacitance in under
20 ns, provide low enough impedances (in both the on
and off states) to ensure that intended state of the
MOSFETs will not be affected, even by large transients.
The input to the MCP1406/07 may be driven directly
from either TTL or CMOS (3V to 18V).
These devices are highly latch-up resistant under any
conditions thatwithin their power and voltage ratings.
They are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
The MCP1406/07 single-output 6A MOSFET driver
family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
temperature rating, making it useful in any wide-
temperature-range application.
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
2006-2012 Microchip Technology Inc.
DS22019B-page 1
MCP1406/07
Package Types
8-Pin PDIP/SOIC
MCP1406
V
DD
1
INPUT 2
NC 3
GND 4
8 V
DD
7 OUT
6 OUT
5 GND
V
DD
1
INPUT 2
NC 3
GND 4
MCP1407
8 V
DD
7 OUT
6
OUT
5 GND
8-Pin 6x5 DFN
MCP1406
V
DD
INPUT
NC
GND
1
2
3
4
8
7
6
5
V
DD
OUT
OUT
GND
V
DD
INPUT
NC
GND
1
2
3
4
MCP1407
8
7
6
5
V
DD
OUT
OUT
GND
5-Pin TO-220
MCP1406
MCP1407
Tab is common to V
DD
1 2 3 4 5
1 2 3 4 5
INPUT
GND
V
DD
GND
V
DD
GND
OUT
INPUT
GND
Note 1:
Duplicate pins must both be connected for proper operation.
2:
Exposed pad of the DFN package is electrically isolated.
DS22019B-page 2
2006-2012 Microchip Technology Inc.
OUT
MCP1406/07
Functional Block Diagram
(1)
V
DD
Inverting
130 µA
300 mV
Output
Output
Non-Inverting
4.7V
MCP1406 Inverting
MCP1407 Non-Inverting
Input
Effective
Input C = 25 pF
GND
Note 1:
Unused inputs should be grounded.
2006-2012 Microchip Technology Inc.
DS22019B-page 3
MCP1406/07
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ...............................(V
DD
+ 0.3V) to (GND – 5V)
Input Current (V
IN
>V
DD
)................................................50 mA
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note
1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
3:
V
DD
I
S
I
S
4.5
—
—
—
130
35
18.0
250
100
V
µA
µA
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
20
20
40
40
30
30
55
55
ns
ns
ns
ns
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
OH
V
OL
R
OH
R
OL
I
PK
I
DC
I
REV
V
DD
– 0.025
—
—
—
—
1.3
—
1.5
—
—
—
2.1
1.5
6
—
0.025
2.8
2.5
—
V
V
A
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
½
18V
(Note
2)
Note 2, Note 3
Duty cycle2%, t
300
µsec.
V
IH
V
IL
I
IN
V
IN
2.4
—
–10
-5
1.8
1.3
—
—
—
0.8
10
V
DD
+0.3
V
V
µA
V
0VV
IN
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Tested during characterization, not production tested.
Valid for AT and MF packages only. T
A
= +25°C
DS22019B-page 4
2006-2012 Microchip Technology Inc.
MCP1406/07
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, operating temperature range with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note
1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
V
DD
I
S
4.5
—
—
Switching times ensured by design.
—
200
50
18.0
500
150
V
µA
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
25
25
50
50
40
40
65
65
ns
ns
ns
ns
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
3.0
2.3
—
0.025
5.0
5.0
V
V
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
V
IN
2.4
—
–10
-5
—
—
—
—
—
0.8
+10
V
DD
+0.3
V
V
µA
V
0VV
IN
V
DD
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 5L-TO-220
JA
JA
JA
JA
—
—
—
—
33.2
125
155
71
—
—
—
—
°C/W
°C/W
°C/W
°C/W
Typical four-layer board with
vias to ground plane
T
A
T
J
T
A
–40
—
–65
—
—
—
+125
+150
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
2006-2012 Microchip Technology Inc.
DS22019B-page 5
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