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BAT54AWT3

Description
Schottky Diodes & Rectifiers 30V 225mW Dual
CategoryDiscrete semiconductor    diode   
File Size121KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAT54AWT3 Overview

Schottky Diodes & Rectifiers 30V 225mW Dual

BAT54AWT3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging codeCASE 419-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
BAT54AWT1G,
SBAT54AWT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
http://onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage
0.35 V (Typ) @ I
F
= 10 mAdc
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(T
J
= 125C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25C
Derate above 25C
Forward Current (DC)
Non−Repetitive Peak Forward Current
t
p
< 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
Value
30
200
1.6
200 Max
600
300
−55
to 125
−55
to +150
Unit
V
mW
mW/C
mA
mA
mA
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
SOT−323
CASE 419
STYLE 4
ANODE
3
CATHODE
1
2
CATHODE
I
F
I
FSM
I
FRM
MARKING DIAGRAM
B7M
G
G
1
T
J
T
stg
C
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
B7
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
BAT54AWT1G
SBAT54AWT1G
Package
SOT−323
(Pb−Free)
SOT−323
(Pb−Free)
Shipping
3,000/Tape & Reel
3,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 3
1
Publication Order Number:
BAT54AWT1/D
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Index Files: 1272  1965  898  1296  584  26  40  19  27  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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