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2N3821

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, TO-206AF, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size222KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N3821 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, TO-206AF, 4 PIN

2N3821 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1689287395
Parts packaging codeBCY
package instructionTO-206AF, 4 PIN
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys DescriptionJFET JFET
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2020-03-11 14:15:05
ConfigurationSINGLE
Minimum drain-source breakdown voltage50 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)3 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
N-CHANNEL J-FET DEPLETION MODE
Equivalent to MIL-PRF-19500/375
DEVICES
LEVELS
2N3821
2N3822
2N3823
2N3821UB
2N3822UB
2N3823UB
MQ = JAN Equivalent
MX = JANTX Equivalent
MV = JANTXV Equivalent
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
T
A
= +25°C
(1)
Operating Junction & Storage
Temperature Range
Symbol
V
GSR
V
DS
V
DG
I
GF
P
T
T
j
, T
stg
2N3821, UB
2N3822, UB
50
50
50
10
2N3823, UB
30
30
30
Unit
V
V
V
mA
mW
°C
300
-55 to + 200
Note:
(1) Derate linearly 1.7mW/°C for T
A
> +25°C.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
TO-72 (TO-206AF)
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0μA dc
Gate Reverse Current
V
DS
= 0, V
GS
= 30V dc
V
DS
= 0, V
GS
= 30V dc
V
DS
= 0, V
GS
= 20V dc
Zero-Gate-Voltage Drain Current
V
GS
= 0, V
DS
= 15V dc
2N3821 / UB
2N3822 / UB
2N3823 / UB
2N3821 / UB
2N3822 / UB
2N3823 / UB
2N3821 / UB
2N3822 / UB
2N3823 / UB
2N3821 / UB
2N3822 / UB
2N3823 / UB
2N3821 / UB
2N3822 / UB
2N3823 / UB
V
(BR)GSSR
50
50
30
0.1
0.1
0.5
0.5
2.0
4.0
0.5
1.0
1.0
2.5
10
20
2.0
4.0
7.5
4.0
6.0
8.0
Vdc
I
GSSR
ηA
I
DSS
mA
Gate-Source Voltage
V
DS
= 15V dc, I
D
= 50μA dc
V
DS
= 15V dc, I
D
= 200μA dc
V
DS
= 15V dc, I
D
= 400μA dc
Gate-Source Cutoff Voltage
V
DS
= 15V dc, I
D
= 0.5ηA dc
V
GS
Vdc
UB - Package
V
GS(off)
Vdc
T4-LDS-0005 Rev. 2 (101425)
Page 1 of 4

2N3821 Related Products

2N3821 2N3823
Description RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, TO-206AF, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Objectid 1689287395 1916729746
Parts packaging code BCY BCY
package instruction TO-206AF, 4 PIN TO-72, 4 PIN
Contacts 4 4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 50 V 30 V
FET technology METAL-OXIDE SEMICONDUCTOR JUNCTION
Maximum feedback capacitance (Crss) 3 pF 2 pF
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-72 TO-206AF
JESD-30 code O-MBCY-W4 O-MBCY-W4
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 4 4
Operating mode DEPLETION MODE DEPLETION MODE
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
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