DMP6110SVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
105m @ V
GS
= -10V
I
D
Max
T
C
= +25°
C
-7.3A
-6.5A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
NEW PRODUCT
-60V
130m @ V
GS
= -4.5V
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.008 grams (Approximate)
D
TSOT26
D
1
D
2
G
3
6
5
4
D
D
S
G
S
Top View
Device Schematic
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP6110SVT-7
DMP6110SVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P61 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
Apr
4
2017
E
May
5
Jun
6
2018
F
Jul
7
2019
G
Aug
8
Sep
9
2020
H
Oct
O
Nov
N
2021
I
Dec
D
April 2015
© Diodes Incorporated
DMP6110SVT
Document number: DS37594 Rev. 2 - 2
1 of 7
www.diodes.com
DMP6110SVT
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= -10V
T
C
= +25°
C
T
C
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
AS
E
AS
-24
-19
18
Value
-60
±20
-7.3
-5.8
Unit
V
V
A
A
A
A
mJ
NEW PRODUCT
NEW PRODUCT
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (380µs Pulse, 1% Duty Cycle)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°
C
T
A
= +70°
C
Steady state
t<10s
T
A
= +25°
C
T
A
= +70°
C
Steady state
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.2
0.75
105
60
1.8
1.1
69
39
15
-55 to +150
Unit
W
°
C/W
°
C/W
W
°
C/W
°
C/W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-60
-1
Typ
-0.7
969
57
44
13.7
8.2
17.2
3.0
3.1
4.4
23
34
42
13.2
6.18
Max
-1
100
-3
105
130
-1.2
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -48V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -4.5A
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= 0V, I
S
= -1A
pF
Ω
V
DS
= -30V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -30V, I
D
= -12A
nC
ns
V
GS
= -10V, V
DS
= -30V, R
GEN
= 3Ω,
I
D
= -12A
ns
nC
I
S
= -12A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
=
+25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP6110SVT
Document number: DS37594 Rev. 2 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMP6110SVT
20.0
18.0
16.0
I
D
, DRAIN CURRENT (A)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
V
GS
=-3.0V
V
GS
=-2.8V
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-5.0V
V
GS
=-3.5V
V
GS
=-4.0V
I
D
, DRAIN CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
1
150℃
125℃
85℃
25℃
-55℃
5
V
DS
=-5V
NEW PRODUCT
NEW PRODUCT
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.14
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.12
0.1
0.08
V
GS
=-10V
0.06
0.04
0.02
5
9
13
17
21
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.14
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS
=-10V
0.12
150℃
125℃
0.1
85℃
0.08
25℃
0.06
-55℃
1
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.3
0.25
V
GS
=-4.5V
0.2
I
D
=-4.5A
0.15
0.1
0.05
I
D
=-3.5A
0
0
8
12
16
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
4
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
2
1.8
V
GS
=-10V, I
D
=-4.5A
1.6
1.4
1.2
V
GS
=-4.5V, I
D
=-3.5A
1
0.8
0.6
0.4
-50
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
-25
0.04
0.02
7
9
11 13 15 17 19 21
I
D
, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
1
3
5
DMP6110SVT
Document number: DS37594 Rev. 2 - 2
3 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMP6110SVT
0.14
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
-50
-25
0
25
50
75
100
125
150
-50
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
20
18
I
DSS
, LEAKAGE CURRENT (nA)
I
S
, SOURCE CURRENT (A)
16
14
12
10
8
6
4
2
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
V
GS
=0V, T
A
=150℃
V
GS
=0V, T
A
=25℃
V
GS
=0V, T
A
=-55℃
0.01
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
V
GS
=0V, T
A
=85℃
V
GS
=0V, T
A
=125℃
100000
10000
1000
100
85℃
10
1
0.1
25℃
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
-25
I
D
=-250μA
I
D
=-1mA
0.12
V
GS
=-4.5V, I
D
=-3.5A
0.1
NEW PRODUCT
NEW PRODUCT
0.08
0.06
V
GS
=-10V, I
D
=-4.5A
0.04
0.02
150℃
125℃
10000
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
10
8
C
iss
1000
6
V
GS
(V)
V
DS
=-30V, I
D
=-12A
4
100
C
oss
C
rss
2
10
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
40
0
0
2
4
8
10
12
14
Q
g
(nC)
Figure 12. Gate Charge
6
16
18
DMP6110SVT
Document number: DS37594 Rev. 2 - 2
4 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMP6110SVT
100
R
DS(ON)
Limited
P
W
=1ms
P
W
=100μs
NEW PRODUCT
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
10
1
P
W
=10ms
P
W
=100ms
0.1
T
J(MAX)
=150℃
P
W
=1s
T
A
=25℃
Single Pulse
P
W
=10s
DUT on 1*MRP board
DC
V
GS
= -10V
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
100
0.01
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
100
1000
R
θJA
(t)=r(t) * R
θJA
R
θJA
=105℃/W
Duty Cycle, D=t1 / t2
D=0.9
D=0.7
DMP6110SVT
Document number: DS37594 Rev. 2 - 2
5 of 7
www.diodes.com
April 2015
© Diodes Incorporated
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