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DMMT3904W-7

Description
Bipolar Transistors - BJT 40V 225mW MATCHED
CategoryDiscrete semiconductor    The transistor   
File Size133KB,4 Pages
ManufacturerDiodes Incorporated
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DMMT3904W-7 Overview

Bipolar Transistors - BJT 40V 225mW MATCHED

DMMT3904W-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)250 ns
Maximum opening time (tons)70 ns
DMMT3904W
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Intrinsically Matched NPN Pair (Note 1)
Small Surface Mount Package
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
A
C
2
E
2
E
1
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
B
C
D
F
H
M
B
2
B
1
C
1
0.65 Nominal
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.015 grams (approximate)
K
H
J
K
L
M
α
J
D
F
L
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Note 2)
(Note 2)
P
d
R
θ
JA
T
j
, T
STG
Value
60
40
6.0
200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
Built with adjacent die from a single wafer.
Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30311 Rev. 11 - 2
1 of 4
www.diodes.com
DMMT3904W
© Diodes Incorporated

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