A Product Line of
Diodes Incorporated
DMP2305UVT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-20V
Max R
DS(on)
(Note 6)
Features
Max I
D
T
A
= 25°C
-4.23A
-3.49A
-3.11A
•
•
•
•
•
•
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
60mΩ @ V
GS
= -4.5V
90mΩ @ V
GS
= -2.5V
113mΩ @ V
GS
= -1.8V
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Finish – Matte Tin annealed over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0013 grams (approximate)
Applications
•
•
•
•
DC-DC Converters
Motor Control
Power management functions
Analog Switch
TSOT26
D
D
G
1
2
3
D
6
5
4
D
D
S
G
Top View
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP2305UVT-7
DMP2305UVT-13
Notes:
Marking
2305
2305
Reel size (inches)
7
13
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2305
2305 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
August 2012
© Diodes Incorporated
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
1 of 8
www.diodes.com
A Product Line of
Diodes Incorporated
DMP2305UVT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= -4.5V
Continuous Drain Current (Note 6) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Value
-20
±8
-4.23
-2.98
-3.49
-2.79
-4.23
-16
Units
V
V
A
A
A
A
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
1.25
1.64
100
76
14
-55 to 150
Units
W
°C/W
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
2 of 8
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP2305UVT
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
100
P
(PK)
, PEAK TRANSIENT POIWER (W)
80
Single Pulse
R
θ
JA
= 110
°
C/W
R
θ
JA(t)
= r
(t)
* R
θ
JA
T
J
- T
A
= P * R
θ
JA(t)
60
40
20
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Figure 1 Single Pulse Maximum Power Dissipation
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 110°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 2 Transient Thermal Resistance
10
100
1,000
0.001
0.00001
0.0001
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
3 of 8
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP2305UVT
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-20
⎯
⎯
-0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
45
60
87
9
727
69
64
23
7.6
1.4
1.2
14.0
13.0
53.8
23.2
Max
⎯
-1
±100
-0.9
60
90
113
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
S
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±8V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -4.2A
V
GS
= -2.5V, I
D
= -3.4A
V
GS
= -1.8V, I
D
= -2.0A
V
DS
= -5V, I
D
= -4A
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
V
GS
= -4.5V, V
DS
= -4V, I
D
= -3.5A
pF
Ω
nC
ns
V
DS
= -4V, V
GS
= -4.5V,
R
L
= 4Ω, R
G
= 6Ω, I
D
= -1A
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
4 of 8
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP2305UVT
20
V
GS
= -8V
20
-I
D
, DRAIN CURRENT (A)
16
V
GS
= -4.5V
V
GS
= -3.0V
V
GS
= -2.5V
16
-I
D
, DRAIN CURRENT (A)
V
DS
= -5V
12
V
GS
= -2.0V
12
8
8
4
V
GS
= -1.5V
4
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
1
2
3
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 3 Typical Output Characteristic
5
0
0
0.5
1
1.5
2
2.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.1
0.1
V
GS
= -4.5V
0.08
0.08
T
A
= 150°C
0.06
V
GS
= -2.5V
0.06
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.04
V
GS
= -4.5V
0.04
T
A
= -55°C
0.02
0.02
0
0
5
10
15
-I
D
, DRAIN-SOURCE CURRENT (A)
Figure 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
0
0
8
12
16
-I
D
, DRAIN CURRENT (A)
Figure 6 Typical On-Resistance
vs. Drain Current and Temperature
4
20
1.4
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.6
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.1
0.08
1.2
0.06
V
GS
= -2.5V
I
D
= -5A
1.0
V
GS
= -4.5V
I
D
= -10A
0.04
V
GS
= -4.5V
I
D
= -10A
0.8
V
GS
= -2.5V
I
D
= -5A
0.02
0.6
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
0
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 On-Resistance Variation with Temperature
-25
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
5 of 8
www.diodes.com
August 2012
© Diodes Incorporated
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