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Datasheet> All Categories > Discrete semiconductor> The transistor> BSS66TC
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BSS66TC

Description
Bipolar Transistors - BJT
CategoryDiscrete semiconductor    The transistor   
File Size33KB，1 Pages
ManufacturerDiodes Incorporated
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Bipolar Transistors - BJT

BSS66TC Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineCECC
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)250 ns
Maximum opening time (tons)70 ns

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SOT23 NPN SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 1995
7
PARTMARKING DETAILS —
BSS66 -
BSS67 -
BSS66R -
BSS67R -
M6
M7
M8
M9
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
TOT
t
j
:t
stg
MIN.
40
60
6
50
0.20
0.30
0.65
20
35
50
30
15
40
70
100
60
30
250
300
4
8
Typ. 6
35
200
50
0.85
0.95
BSS66
BSS67
C
B
VALUE
60
40
6
200
100
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mW
°C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)EBO
I
CES
V
CE(sat)
V
BE(sat)
h
FE
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
Collector-Emitter Breakdown Voltage V
(BR)CEO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector- Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current
Transfer Ratio
BSS66
MAX. UNIT
V
V
V
nA
V
V
V
V
CONDITIONS.
I
C
=1mA
I
C
=10µA
I
E
=10µA
V
CES
=30V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100µA,
I
C
=1mA,
I
C
=10mA, V
CE
=1V
I
C
=50mA*,
I
C
=100mA*,
I
C
=100µA,
I
C
=1mA,
I
C
=10mA, V
CE
=1V
I
C
=50mA*,
I
C
=100mA*,
150
Static Forward Current
Transfer Ratio
BSS67
h
FE
300
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
BSS66
BSS67
f
T
C
obo
C
ibo
N
t
d
; t
f
t
s
t
f
MHz
MHz
pF
pF
dB
ns
ns
ns
I
C
=10mA, V
CE
=20V
f=100MHz
V
CB
=5V, f=100kHz
V
EB
=0.5V, f=100kHz
I
C
=100µA, V
CE
=5V
R
S
=1kΩ, f=10Hz to15.7 kHz
V
CC
=3V, I
C
=10mA
I
B1
= I
B2
=1mA
Switching times: Delay; Rise
Storage Time
Fall Time
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PAGE NUMBER

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