STPS40SM120C
Power Schottky rectifier
Datasheet - production data
A1
K
A2
Description
This Schottky rectifier is suited for high frequency
switch mode power supply.
The voltage drop versus leakage current trade-off
is in keeping with medium power hi-density
adapter design.
Packaged in TO-220AB narrow leads, TO-220AB
and I²PAK, this device is intended to be used in
notebook, game station and desktop adaptors,
providing in these applications a good efficiency
at both low and high load.
Table 1: Device summary
Symbol
I
F(AV)
V
RRM
T
j
(max.)
V
F
(typ.)
Value
2 x 20 A
120 V
150 °C
0.46 V
K
A2
A1
TO-220AB
A2
I²PAK
A1
K
A2
TO-220AB
A1 K
narrow leads
Features
High current capability
Avalanche rated
Low forward voltage drop current
High frequency operation
ECOPACK
®
2 compliant component on
TO-220AB
Figure 1: Electrical characteristics
V
ARM
and I
ARM
must respect the reverse safe
operating area defined in Figure 9. V
AR
and
I
AR
are pulse measurements (t
p
< 1 μs). V
R
,
I
R
, V
RRM
and V
F
, are static characteristics.
April 2017
DocID022917 Rev 3
1/12
www.st.com
This is information on a product in full production.
Characteristics
STPS40SM120C
1
Characteristics
Table 2: Absolute ratings (per diode, limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
(1)
V
ARM
(2)
V
ASM
T
stg
T
j
Notes:
(1)
For
(2)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ = 0.5, square wave
Surge non repetitive forward
current
Repetitive peak avalanche
power
Maximum repetitive peak
avalanche voltage
Maximum single pulse peak
avalanche voltage
Storage temperature range
Maximum operating junction temperature
(3)
Per diode, T
C
= 125 °C
Per device, T
C
= 115 °C
t
p
= 10 ms sine-wave
t
p
= 10 µs, T
j
= 125 °C
Value
120
30
20
40
210
1150
Unit
V
A
A
A
W
t
p
< 10 μs, T
j
< 125 °C, I
AR
< 7.7 A
150
V
-65 to +175
150
°C
°C
pulse time duration deratings, please refer to figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
See Figure 9
tot
/dT
j
)
(3)
(dP
< (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
R
th(j-c)
R
th(c)
Junction to case
Coupling
Parameter
Per diode
Total
Max. value
1.35
0.93
0.50
°C/W
Unit
When the two diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
2/12
DocID022917 Rev 3
STPS40SM120C
Table 4: Static electrical characteristics (values per diode)
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
V
F
(2)
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Notes:
(1)
Characteristics
Min.
-
-
-
-
-
-
0.63
Typ.
55
20
0.46
0.55
Max.
275
50
0.51
0.60
0.83
0.69
V
Unit
µA
mA
V
R
= V
RRM
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
Pulse test: t
p
= 5 ms, δ < 2%
test: t
p
= 380 µs, δ < 2%
(2)
Pulse
To evaluate the conduction losses, use the following equation:
P = 0.52 x I
F(AV)
+ 0.0085 x I
F2(RMS)
DocID022917 Rev 3
3/12
Characteristics
STPS40SM120C
1.1
Characteristics (curves)
Figure 2: Average forward power dissipation
versus average forward current (per diode)
20
Figure 3: Average forward current versus ambient
temperature (δ = 0.5, per diode)
24
P
F(AV)
(W)
δ = 0.5
δ= 1
δ = 0.2
I
F(AV)
(A)
Rth(j-a) = Rth(j-c)
16
20
16
12
12
δ = 0.05
8
δ = 0.1
8
4
T
4
δ = t
p
/ T
t
p
20
I
F(AV)
(A)
0
0
4
8
12
16
24
28
0
0
25
50
T
am b
(°C)
75
100
125
150
Figure 4: Normalized avalanche power derating
versus pulse duration (per diode)
1
P
ARM
(t p )
P
ARM
(10 µs)
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
1.0
0.9
0.8
Z
th(j-c)
/R
th(j-c)
0.1
0.7
0.6
0.5
0.4
Single pulse
0.01
0.3
0.2
0.1
t
p
(µs)
t
p
(s)
1.E-03
1.E-02
1.E-01
1.E+00
0.001
1
10
100
1000
0.0
1.E-04
Figure 6: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
1.E+02
Figure 7: Junction capacitance versus reverse
voltage applied (typical values, per diode)
10000
I
R
(mA)
T
j
=150°C
C(pF)
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
1.E+01
T
j
=125°C
1.E+00
T
j
=100°C
T
j
=75°C
1000
1.E-01
T
j
=50°C
1.E-02
T
j
=25°C
1.E-03
0
10
20
30
40
50
60
70
80
90
100
V
R
(V)
110
120
V
R
(V)
100
1
10
100
1000
4/12
DocID022917 Rev 3
STPS40SM120C
Figure 8: Forward voltage drop versus forward
current (per diode)
Characteristics
Figure 9: Reverse safe operating area
(t
p
< 1 µs and T
j
< 150 °C, per diode)
10.0
9.5
9.0
8.5
8.0
7.5
I
arm
(A)
7.0
6.5
V
arm
(V)
120
130
140
150
160
170
DocID022917 Rev 3
5/12
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