BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
●
●
●
●
Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
50 W at 25°C Case Temperature
4 A Continuous Collector Current
Minimum h
FE
of 750 at 1.5 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDT60
Collector-base voltage (I
E
= 0)
BDT60A
BDT60B
BDT60C
BDT60
Collector-emitter voltage (I
B
= 0)
BDT60A
BDT60B
BDT60C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
-60
-80
-100
-120
-60
-80
-100
-120
-5
-4
-0.1
50
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDT60
V
(BR)CEO
I
C
= -30 mA
I
B
= 0
(see Note 3)
BDT60A
BDT60B
BDT60C
V
CE
= -30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
CBO
Collector cut-off
current
V
CB
= -120 V
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
I
EBO
h
FE
V
CE(sat)
V
BE(on)
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
I
B
=
V
CE
=
I
E
=
-5 V
-3 V
-6 mA
-3 V
-1.5 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
B
= 0
-1.5 A
-1.5 A
-1.5 A
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
750
-2.5
-2.5
-2.0
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
MIN
-60
-80
-100
-120
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
-5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.5
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -2 A
V
BE(off)
= 5 V
I
B(on)
= -8 mA
R
L
= 20
Ω
†
MIN
I
B(off)
= 8 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
4.5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
20000
10000
h
FE
- Typical DC Current Gain
TCS115AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
-1·5
TCS115AB
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
-1·0
1000
-0·5
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0
-0·5
-1·0
I
C
- Collector Current - A
-5·0
V
CE
= -3 V
t
p
= 300 µs, duty cycle < 2%
100
-0·5
-1·0
I
C
- Collector Current - A
-5·0
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS115AC
-2·5
-2·0
-1·5
-1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
I
C
- Collector Current - A
-5·0
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-10
SAS115AB
I
C
- Collector Current - A
-1·0
-0·1
BDT60
BDT60A
BDT60B
BDT60C
-0.01
-1·0
-10
-100
-1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
60
P
tot
- Maximum Power Dissipation - W
TIS110AA
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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