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BYR29X-800,127

Description
Diodes - General Purpose, Power, Switching Ultrafast Recovery Diodes 800V 8A
CategoryDiscrete semiconductor    diode   
File Size211KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BYR29X-800,127 Overview

Diodes - General Purpose, Power, Switching Ultrafast Recovery Diodes 800V 8A

BYR29X-800,127 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220
Contacts2
Manufacturer packaging codeSOD113
Reach Compliance Codenot_compliant
BYR29X-800
Ultrafast power diode
19 October 2017
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
Fast switching
Isolated plastic package
Low forward voltage drop
Soft recovery characteristic
3. Applications
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
High frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
reverse voltage
average forward
current
Conditions
DC
δ = 0.5 ; T
h
≤ 73 °C; SQW;
Fig. 1;
Fig. 2; Fig. 3
[1]
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
1.07
1.75
-
60
Max
800
8
16
60
66
1.5
1.95
1.7
75
Unit
V
A
A
A
A
V
V
V
ns
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
h
≤ 73 °C; SQW
current
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; SIN
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN
I
F
= 8 A; T
j
= 150 °C;
Fig. 5
I
F
= 20 A; T
j
= 25 °C;
Fig. 5
I
F
= 8 A; T
j
= 25 °C
Static characteristics
V
F
forward voltage
Dynamic characteristics
t
rr
[1]
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 6; Fig. 7
Neglecting switching and reverse current losses
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