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BD238S

Description
Bipolar Transistors - BJT PNP Epitaxial Sil
Categorysemiconductor    Discrete semiconductor   
File Size157KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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Bipolar Transistors - BJT PNP Epitaxial Sil

BD238S Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-126-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO- 100 V
Emitter- Base Voltage VEBO- 5 V
Maximum DC Collector Current2 A
Gain Bandwidth Product fT3 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Height11 mm
Length8 mm
PackagingBulk
Width3.25 mm
Continuous Collector Current- 2 A
DC Collector/Base Gain hfe Min40
Pd - Power Dissipation25 W
Factory Pack Quantity250
Unit Weight0.026843 oz
Is Now Part of
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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