BLF1043
UHF power LDMOS transistor
Rev. 8 — 6 May 2013
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from HF to
1000 MHz.
Table 1.
Typical performance
RF performance at T
h
= 25
C in a common source test circuit.
Mode of operation
CW, 2-tone, class-AB
CW, 1-tone, class-AB
f
(MHz)
f
1
= 960; f
2
= 960.1
f = 960
V
DS
I
DQ
(V)
26
26
85
85
P
L
G
p
(dB)
18.5
D
(%)
40
52
d
im
(dBc)
-31
-
(mA) (W)
10
10 (PEP) 18.5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-tone performance at a supply voltage of 26 V and I
DQ
of 85 mA
Output power = 10 W (PEP)
Gain = 18.5 dB
Efficiency = 40%
d
im
= -31 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (HF to 1000 MHz)
No internal matching for broadband operation
SMD package.
1.3 Applications
RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier
applications in the 800 to 1000 MHz frequency range
Broadcast drivers.
NXP Semiconductors
BLF1043
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source, connected to flange
1
1
Simplified outline
Graphic symbol
3
2
3
sym112
2
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF1043
-
Description
ceramic surface mounted package; 2 leads
Version
SOT538A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
Conditions
Min
-
-
-
-65
-
Max
65
15
2.2
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th j-h
[1]
Thermal characteristics
Parameter
thermal resistance from junction
to heatsink
Conditions
T
mb
= 25
C
[1]
Typ
9
Unit
K/W
Thermal resistance is determined under RF operating conditions. Typical value with device soldered on PC
board with 32 via holes (diameter 0.3 mm) and thermal compound between PCB and heatsink.
BLF1043
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 6 May 2013
2 of 12
NXP Semiconductors
BLF1043
UHF power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
iss
C
oss
C
rss
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain-source leakage
current
drain cut-off current
gate leakage current
Conditions
V
GS
= 0; I
D
=
0.2 mA
V
DS
= 10 V; I
D
=
20 mA
V
GS
= 0; V
DS
=
26 V
V
GS
= V
GSth
+ 9
V; V
DS
= 10 V
V
GS
=
15
V;
V
DS
= 0
Min
65
4
-
2.8
-
-
-
-
-
-
Typ
-
-
-
-
-
0.5
1.05
11
9
0.5
Max
-
5
1.5
-
40
-
-
-
-
-
Unit
V
V
A
A
nA
S
pF
pF
pF
forward transconductance V
DS
= 10 V; I
D
=
0.75 A
drain-source on-state
resistance
input capacitance
output capacitance
feedback capacitance
V
DS
= 10 V; I
D
=
0.75 A
V
GS
= 0; V
DS
=
26 V; f = 1 MHz
V
GS
= 0; V
DS
=
26 V; f = 1 MHz
V
GS
= 0; V
DS
=
26 V; f = 1 MHz
7. Application information
Table 7.
RF performance in a common source class-AB circuit
T
h
= 25
C; R
th j-h
= 9 K/W, unless otherwise specified.
Mode of operation
CW, 2-tone, class-AB
f
(MHz)
f
1
= 960; f
2
= 960.1
V
DS
(V)
26
I
DQ
(mA)
85
P
L
(W)
G
p
(dB)
D
(%)
>38
d
im
(dBc)
-25
10
>16.5
(PEP)
7.1 Ruggedness in class-AB operation
The BLF1043 is capable of withstanding a load mismatch corresponding to VSWR = 10 :
1 through all phases under the following conditions: V
DS
= 26 V; f = 960 MHz at rated load
power.
BLF1043
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 6 May 2013
3 of 12
NXP Semiconductors
BLF1043
UHF power LDMOS transistor
20
G
p
G
p
(dB)
16
h
D
mdb150
60
h
D
(%)
d
im
0
(dBC)
-20
mdb151
40
d
3
d
5
-40
d
7
12
20
-60
8
0
4
8
12
16
P
L
(PEP)(W)
0
-80
0
4
8
12
16
P
L
(PEP)(W)
Two-tone performance.
V
DS
= 26 V; I
DQ
= 85 mA; T
h
25
C;
f
1
= 960 MHz; f
2
= 960.1 MHz.
Two-tone performance.
V
DS
= 26 V; I
DQ
= 85 mA; T
h
25
C;
f
1
= 960 MHz; f = 960.1 MHz.
Fig 1.
Power gain and efficiency as functions of peak
envelope load power; typical values.
Fig 2.
Intermodulation distortion as a function of
peak envelope load power; typical values.
22
G
p
(dB)
G
p
mdb152
70
h
D
(%)
Z
i
6
mdb148
(W)
2
r
i
18
50
-2
h
D
14
30
-6
X
i
10
0
4
8
12
16
P
L
(W)
10
20
-10
800
840
880
920
960
1000
f (MHz)
Single-tone performance.
V
DS
= 26 V; I
DQ
= 85 mA; T
h
25
C;
f = 960 MHz.
V
DS
= 26 V; I
DQ
= 85 mA; P
L
= 10 W; T
h
25
C.
Impedance measured at reference planes; see
Figure 6.
Fig 3.
Power gain and efficiency as functions of load
power; typical values.
Fig 4.
Input impedance as a function of frequency
(series components); typical values.
BLF1043
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 6 May 2013
4 of 12
NXP Semiconductors
BLF1043
UHF power LDMOS transistor
12
Z
L
(W)
8
X
L
R
L
mdb149
4
0
800
840
880
920
960
1000
f (MHz)
reference planes
mgt002
V
DS
= 26 V; I
DQ
= 85 mA; T
h
25
C.
Impedance measured at reference planes; see
Figure 6.
Fig 5.
Input impedance as a function of frequency
(series components); typical values.
Fig 6.
Measuring reference planes: SOT538A.
drain
Z
L
gate
Z
IN
mgs998
Fig 7.
Definition of transistor impedance.
V
DS
C11
L2
R2
C12
V
GS
C4
C3
R1
L7
L9
C6
L10
L1
C7
C8
C9
C10
L8
50
Ω
input
L3
C2
L4
L5
L6
C5
50
Ω
output
C1
mdb153
Fig 8.
Class-AB test circuit for 960 MHz.
BLF1043
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 6 May 2013
5 of 12
京公网安备 11010802033920号
EEWORLD
