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DSC5G03T0L

Description
RF Bipolar Transistors Small Sig Transistor 2.0x2.1mm Flat lead
CategoryDiscrete semiconductor    The transistor   
File Size769KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSC5G03T0L Overview

RF Bipolar Transistors Small Sig Transistor 2.0x2.1mm Flat lead

DSC5G03T0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)800 MHz
DSC2G03
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
High transition frequency f
T
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: C6
Packaging
DSC2G03×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
opr
T
stg
Rating
30
20
3
50
200
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
*1, 2
Reverse transfer capacitance
(Common emitter)
Reverse transfer capacitance
(Common base)
Power gain
2. *1: Pulse measurement
*
2: Rank classification
Code
Rank
f
T
Marking Symbol
T
T
800 to 1 400
C6T
S
S
1 000 to 1 600
C6S
0
No-rank
800 to 1 600
C6
Symbol
V
CBO
V
EBO
V
BE
h
FE
f
T
C
re
C
rb
PG
Conditions
I
C
= 100
mA,
I
E
= 0
I
E
= 10
mA,
I
C
= 0
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 10 V, I
C
= 15 mA
V
CE
= 10 V, I
C
= 1 mA , f = 10.7 MHz
V
CB
= 6 V, I
C
= 0 , f = 1 MHz
V
CE
= 10 V, I
C
= 1 mA , f = 200 MHz
Min
30
3
Typ
Max
Unit
V
V
740
25
800
0.9
0.7
20
250
1 600
mV
MHz
pF
pF
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2014
Ver. BED
1

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