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BFL4007

Description
MOSFET NCH 10V DRIVE SERIES
CategoryDiscrete semiconductor    The transistor   
File Size256KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BFL4007 Overview

MOSFET NCH 10V DRIVE SERIES

BFL4007 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)215 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)8.7 A
Maximum drain-source on-resistance0.68 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)49 A
surface mountNO
Terminal surfaceTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Ordering number : ENA1689A
BFL4007
N-Channel Power MOSFET
600V, 14A, 0.68
Ω
, TO-220F-3FS
Features
http://onsemi.com
Reverse recovery time trr=95ns (typ.)
Input capacitance Ciss=1200pF (typ.)
ON-resistance RDS(on)=0.52
Ω
(typ.)
10V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Source to Drain Diode Forward Current (DC)
Source to Drain Diode Forward Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc*1
IDpack*2
IDP
IS
ISP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
PW≤10μs, duty cycle≤1%
Tc=25°C (Our ideal heat dissipation condition)*3
Conditions
Ratings
600
±30
14
8.7
49
14
49
2.0
40
150
--55 to +150
196
8.5
Unit
V
V
A
A
A
A
A
W
W
°C
°C
mJ
A
Note :
*1
Shows chip capability
*2
Package limited
*3
Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=50V, L=5mH, IAV=8.5A (Fig.1)
*5
L
5mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
3.3
4.7
2.54
Ordering & Package Information
Device
BFL4007-1E
Package
TO-220F-3FS
SC-67
Shipping
50
pcs./tube
memo
Pb-Free
BFL4007-1E
Marking
Electrical Connection
2
15.8
15.87
6.68
3.23
FL4007
LOT No.
1
2.76
1.47 MAX
0.8
1
2
3
12.98
3
0.5
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
2.54
2.54
Semiconductor Components Industries, LLC, 2013
June, 2013
61913 TKIM TC-00002923/60210QB TKIM TC-00002337 No. A1689-1/6
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