BC807U
PNP Silicon AF Transistor Array
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Two (galvanic) internal isolated Transistor
with good matching in on package
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
5
6
1
2
3
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07175
Type
BC807U
Maximum Ratings
Parameter
Marking
5Bs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
45
50
5
500
1000
100
200
330
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
115 °C
Junction temperature
Storage temperature
mA
mW
°C
1
2011-08-11
BC807U
Thermal Resistance
Parameter
Symbol
R
thJS
Symbol
min.
DC Characteristics
Value
≤
105
Unit
Junction - soldering point
1)
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Values
typ.
max.
Unit
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
45
50
5
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 25 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
µA
-
-
-
-
-
0.1
50
100
nA
-
160
40
250
-
-
-
400
-
0.7
1.2
V
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
h
FE
-
DC current gain
2)
I
C
= 100 mA,
V
CE
= 1 V
I
C
= 500 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
V
BEsat
-
-
Base emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 50 mA
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
f
= 1 MHz,
V
BE
= 10 V
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
1
For
f
T
C
cb
C
eb
-
-
-
200
8
60
-
-
-
MHz
pF
calculation of
R
thJA
please refer to Application Note Thermal Resistance
test: t < 300µs; D < 2%
2
Pulse
2
2011-08-11
Embedded System
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