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IXFB30N120P

Description
MOSFET 30 Amps 1200V 0.35 Rds
CategoryDiscrete semiconductor    The transistor   
File Size137KB,5 Pages
ManufacturerIXYS
Environmental Compliance
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IXFB30N120P Overview

MOSFET 30 Amps 1200V 0.35 Rds

IXFB30N120P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
package instructionPLASTIC, PLUS264, 3 PIN
Contacts3
Reach Compliance Codecompliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)2000 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1200 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1250 W
Maximum pulsed drain current (IDM)75 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Polar
TM
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB30N120P
V
DSS
I
D25
R
DS(on)
t
rr
=
=
1200V
30A
350mΩ
Ω
300ns
PLUS264
TM
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
Maximum Ratings
1200
1200
±
30
±
40
30
75
15
2.0
15
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
10
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
N/lb.
g
Features
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
G = Gate
S = Source
G
D
S
Tab
D
= Drain
Tab = Drain
Advantages
Plus 264
TM
Package for Clip or Spring
Mounting
High Power Density
Easy to Mount
Space Savings
Applications
High Voltage Switch-Mode and
Resonant-Mode Power Supplies
High Voltage Pulse Power
Applications
High Voltage Discharge Circuits in
Laser Pulsers
Spark Igniters, RF Generators
High Voltage DC-DC Coverters
High Voltage DC-AC Inverters
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ. Max.
1200
3.5
6.5
±
300
V
V
nA
50
μA
5.0 mA
350 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2010 IXYS CORPORATION, All Rights Reserved
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