MMBTA92L, SMMBTA92L,
MMBTA93L
High Voltage Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
92
−300
−300
−5.0
−500
93
−200
−200
−5.0
Unit
Vdc
Vdc
Vdc
mAdc
MARKING
DIAGRAM
DEVICE MARKING
MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation (Note 2)
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT−23 (TO−236AF)
CASE 318
STYLE 6
2x
M
G
2x MG
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBTA92LT1G
SMMBTA92LT1G
MMBTA92LT3G
SMMBTA92LT3G
MMBTA93LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 10000 / Tape & Reel
(Pb−Free)
SOT−23 10000 / Tape & Reel
(Pb−Free)
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
January, 2013
−
Rev. 10
1
Publication Order Number:
MMBTA92LT1/D
MMBTA92L, SMMBTA92L, MMBTA93L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 3)
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−100
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
=
−200
Vdc, I
E
= 0)
(V
CB
=
−160
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
=
−3.0
Vdc, I
C
= 0)
MMBTA92, SMMBTA92
MMBTA93
MMBTA92, SMMBTA92
MMBTA93
MMBTA92, SMMBTA92
MMBTA93
V
(BR)CEO
Vdc
−300
−200
−300
−200
−5.0
−
−
Vdc
−
−
−
Vdc
mAdc
V
(BR)CBO
V
(BR)EBO
I
CBO
−
−
−
−0.25
−0.25
−0.1
I
EBO
mAdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−30
mAdc, V
CE
=
−10
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
=
−20
mAdc, I
B
=
−2.0
mAdc)
Base−Emitter Saturation Voltage
(I
C
=
−20
mAdc, I
B
=
−2.0
mAdc)
Both Types
Both Types
MMBTA92, SMMBTA92
MMBTA93
MMBTA92, SMMBTA92
MMBTA93
V
CE(sat)
h
FE
−
25
40
25
25
−
−
−
−
−
−
−
Vdc
−0.5
−0.5
−0.9
Vdc
V
BE(sat)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain
— Bandwidth Product
(I
C
=
−10
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
=
−20
Vdc, I
E
= 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
MMBTA92, SMMBTA92
MMBTA93
f
T
C
cb
50
−
MHz
pF
−
−
6.0
8.0
300
250
hFE , DC CURRENT GAIN
200
25°C
150
-55°C
100
50
0
0.1
1.0
I
C
, COLLECTOR CURRENT (mA)
10
100
T
J
= +125°C
V
CE
= 10 Vdc
Figure 1. DC Current Gain
http://onsemi.com
2
MMBTA92L, SMMBTA92L, MMBTA93L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
D
SEE VIEW C
3
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
MMBTA29LT1/D
Analogue and Mixed Signal
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