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D820N26T

Description
Rectifiers Rectifier Diode 820A 2600V
CategoryDiscrete semiconductor    diode   
File Size220KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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D820N26T Overview

Rectifiers Rectifier Diode 820A 2600V

D820N26T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionO-CEDB-N2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.15 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current9000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature180 °C
Minimum operating temperature-40 °C
Maximum output current820 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2600 V
Maximum reverse current40000 µA
Reverse test voltage2600 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D820N
T
vj
= -25°C... T
vj max
V
RRM
2000
2200
2400
2600
2800
1273
V
V
V
A
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
Kenndaten
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
200 A
i
F
4000 A
on-state characteristic
Elektrische Eigenschaften
T
C
= 100 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
I
FRMSM
I
FAVM
I
FAVM
I
FRMS
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
I²t
820 A
1160 A
1820 A
10600 A
9000 A
561,8 10³A²s
405 10³A²s
T
vj
= T
vj max
, i
F
= 2,4 kA
T
vj
= T
vj max
, i
F
= 750 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
F
V
(TO)
r
T
A=
B=
C=
D=
max.
max.
2,15 V
1,25 V
0,83 V
0,52 mΩ
v
F
=
A
+
B
i
F
+
C
ln ( i
F
+
1 )
+
D
Sperrstrom
reverse current
i
F
vj
vj max
R
RRM
-1,056E-01
6,217E-04
2,148E-01
-1,863E-02
max.
40 mA
T =T
,v =V
Thermische Eigenschaften
i
R
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Kühlfläche / cooling surface
beidseitig / two-sided,
θ
= 180°sin
beidseitig / two-sided, DC
Anode / anode,
θ
= 180°sin
Anode / anode, DC
Kathode / cathode,
θ
= 180°sin
Kathode / cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
R
thJC
max.
max.
max.
max.
max.
max.
max.
max.
0,039
0,035
0,062
0,058
0,093
0,089
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
R
thCH
0,0075 °C/W
0,0150 °C/W
160 °C
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
T
vj max
T
c op
T
stg
-40...+180 °C
-40...+180 °C
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2010-01-20
3.1
IFBIP D AEC/ 2010-01-20, H.Sandmann
A 14/10
Seite/page
1/8

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Description Rectifiers Rectifier Diode 820A 2600V Rectifiers Rectifier Diode 820A 2400V Rectifiers Rectifier Diode 820A 2200V
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
package instruction O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.15 V 2.15 V 2.15 V
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 9000 A 9000 A 9000 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 180 °C 180 °C 180 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 820 A 820 A 820 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 2600 V 2400 V 2200 V
Maximum reverse current 40000 µA 40000 µA 40000 µA
Reverse test voltage 2600 V 2400 V 2200 V
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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