STPS30H60C
Power Schottky rectifier
Features
■
■
■
■
■
High junction temperature capability
Avalanche rated
Low leakage current
Good trade-off between leakage current and
forward voltage drop
High frequency operation
A1
K
A2
K
A1
A2
TO-220FPAB
STPS30H60CFP
Description
Dual centre tab Schottky rectifier suited for high
frequency switch mode power supply.
Packaged in TO-220FPAB, TO-220AB, TO-247,
I
2
PAK, and D
2
PAK, this device is intended to be
used in notebook and LCD adaptors and desktop
SMPS. In these applications the STPS30H60C
provides a good margin between the remaining
voltages applied on the diode and the voltage
capability of the diode.
A2
K
A1
A1
K
A2
TO-220AB
STPS30H60CT
I
2
PAK
STPS30H60CR
K
A2
A1
K
A1
A2
D
STPS30H60CG
2
PAK
TO-247
STPS30H60CW
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
T
j
V
F (typ)
Value
2 X 15 A
60 V
175 °C
0.535 V
July 2011
Doc ID 12123 Rev 3
1/11
www.st.com
11
Characteristics
STPS30H60C
1
Table 2.
Symbol
V
RRM
I
F(RMS)
Characteristics
Absolute ratings (limiting values per diode)
Parameter
Repetitive peak reverse voltage
Forward rms current
TO-220AB
T
c
= 155 °C
I
F(AV)
Average forward current,
δ
= 0.5
TO-220FPAB
T
c
= 125 °C
TO-220FPAB
T
c
= 90 °C
I
FSM
P
ARM
T
stg
T
j
Surge non repetitive forward current
Releative peak avalanche power
Storage temperature range
Maximum operating junction temperature
(1)
T
j
= 25 °C
Per diode
Total package
Per diode
Total package
Value
60
30
15
30
15
A
30
230
10 200
-65 to + 175
175
A
W
°C
°C
Unit
V
A
A
t
p
= 10 ms sinusoidal
t
p
= 1 µs
1.
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
Table 3.
Symbol
Thermal parameters
Parameter
TO-220AB, I
2
PAK,
D
2
PAK, TO-247
Per diode
Total
Per diode
Total
Value
1.5
0.8
4.7
3.95
0.1
3.2
°C/W
Unit
R
th(j-c)
Junction to case
TO-220FPAB
R
th(c)
Coupling
TO-220AB, I
2
PAK, D
2
PAK, TO-247
TO-220FPAB
Table 4.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
I
F
= 7.5 A
I
F
= 15 A
I
F
= 30 A
Min.
Typ.
Max.
60
8
435
535
635
25
550
470
660
570
820
690
mV
Unit
µA
mA
V
F(2)
Forward voltage drop
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 380 µs,
δ
< 2%
To evaluate the conduction losses use the following equation: P = 0.45 x I
F(AV)
+ 0.008 x I
F
2
(RMS)
2/11
Doc ID 12123 Rev 3
STPS30H60C
Characteristics
Figure 1.
Conduction losses versus
average forward current
Figure 2.
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
P
F(AV)
(W)
12
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
18
16
I
F(AV)
(A)
R
th(j-a)
=R
th(j-c)
10
14
TO-220FPAB
8
12
10
6
8
R
th(j-a)
=15 °C/W
4
T
6
4
2
2
I
F(AV)
(A)
0
0
2
4
6
8
10
12
δ
=tp/T
14
16
tp
T
amb
(°C)
0
25
50
75
100
125
150
175
0
18
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
1
P
ARM
(tp)
P
ARM
(1µs)
1.2
1
P
ARM
(T
j
)
P
ARM
(25 °C)
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
t
p
(µs)
0.1
1
10
100
1000
0
25
T
j
(°C)
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
TO-220AB, TO-247 D PAK, I PAK
2
2
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
TO-220FPAB
200
180
160
140
120
100
80
60
40
20
I
M
(A)
120
I
M
(A)
100
T
C
=50°C
80
T
C
=50 °C
T
C
=75°C
60
T
C
=75 °C
40
T
C
=125°C
I
M
t
20
δ
=0.5
I
M
t
δ
=0.5
T
C
=125 °C
t(s)
1.E-02
1.E-01
1.E+00
t(s)
1.E-02
1.E-01
1.E+00
0
1.E-03
0
1.E-03
Doc ID 12123 Rev 3
3/11
Characteristics
STPS30H60C
Figure 7.
Relative variation of thermal
Figure 8.
impedance junction to case versus
pulse duration
1.0
0.9
0.8
Relative variation of thermal
impedance junction to case versus
pulse duration
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Z
th(j-c)
/R
th(j-c)
TO-220AB, TO-247 D
2
PAK, I
2
PAK
Z
th(j-c)
/R
th(j-c)
TO-220FPAB
δ=0.5
0.7
0.6
0.5
δ=0.5
δ=0.2
δ=0.1
0.4
T
0.3
0.2
δ=0.2
δ=0.1
T
Single pulse
t
p
(s)
1.E-02
1.E-01
δ
=tp/T
tp
0.1
Single pulse
t
p
(s)
1.E-01
δ
=tp/T
1.E+00
tp
0.0
1.E+00
1.E-03
1.E-03
1.E-02
1.E+01
Figure 9.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
T
j
=150°C
Figure 10. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(nF)
10.0
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
I
R
(mA)
1.E+02
1.E+01
T
j
=125°C
T
j
=100°C
T
j
=75°C
1.E+00
1.0
1.E-01
T
j
=50°C
1.E-02
T
j
=25°C
1.E-03
0
5
10
15
20
25
30
35
V
R
(V)
40
45
50
55
60
V
R
(V)
0.1
1
10
100
Figure 11. Forward voltage drop versus
forward current (per diode)
I
FM
(A)
T
J
=125 °C
Maximum values
T
J
=125 °C
Typical values
T
J
=25 °C
Maximum values
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab
80
70
60
50
40
30
20
10
100
R
th(j-a)
(°C/W)
epoxy printed board FR4, copper thickness = 35 µm
D
2
PAK
10
V
FM
(V)
1
0.0 0.1
0.2 0.3 0.4 0.5
0.6 0.7 0.8
0.9 1.0 1.1 1.2
1.3 1.4
0
0
5
10
15
S(cm²)
20
25
30
35
40
4/11
Doc ID 12123 Rev 3
STPS30H60C
Package information
2
Package information
●
●
●
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque values:
– TO-220FPAB and TO-220AB 0.4 to 0.6 N·m
– TO-247 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 5.
TO-220FPAB dimensions
Dimensions
Ref.
Millimeters
Min.
A
A
H
B
Inches
Min.
0.173
0.098
0.098
0.018
0.030
0.045
0.045
0.195
0.094
0.393
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.205
0.106
0.409
Max.
4.6
2.7
2.75
0.70
1
1.70
1.70
5.20
2.7
10.4
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
B
D
E
Dia
L6
L2
L3
L5
F1
L4
F2
D
L7
F
F1
F2
G
G1
H
L2
E
16 Typ.
28.6
9.8
2.9
15.9
9.00
3.00
30.6
10.6
3.6
16.4
9.30
3.20
0.63 Typ.
1.126
0.386
0.114
0.626
0.354
0.118
1.205
0.417
0.142
0.646
0.366
0.126
F
G1
G
L3
L4
L5
L6
L7
Dia.
Doc ID 12123 Rev 3
5/11
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