EEWORLDEEWORLDEEWORLD

Part Number

Search

DSC200200L

Description
Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm
CategoryDiscrete semiconductor    The transistor   
File Size768KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric Compare View All

DSC200200L Online Shopping

Suppliers Part Number Price MOQ In stock  
DSC200200L - - View Buy Now

DSC200200L Overview

Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm

DSC200200L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B-B, SC-59A, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionDSC200200L, NPN Bipolar Transistor, 500 mA 50 V HFE:120 160 MHz, 3-Pin Mini3 G3 B B
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-236AA
JESD-30 codeR-PDSO-G3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
DSC2002
Silicon NPN epitaxial planar type
For general amplification
Complementary to DSA2002
Features
Low collector-emitter saturation voltage V
CE(sat)
High forward current transfer ratio h
FE
with excellent linearity
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: C2
Packaging
DSC2002×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
opr
T
stg
Rating
60
50
5
500
1
200
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
Mini3-G3-B-B
SC-59A
TO-236AA/SOT-23
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10
mA,
I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
I
C
= 300 mA, I
B
= 30 mA
V
CE
= 10 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
120
40
0.1
160
4.8
15
0.6
Min
60
50
5
0.1
340
Typ
Max
Unit
V
V
V
mA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*
2: Rank classification
Code
Rank
h
FE
Marking Symbol
R
R
120 to 240
C2R
S
S
170 to 340
C2S
0
No-rank
120 to 340
C2
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2014
Ver. EED
1

DSC200200L Related Products

DSC200200L DSC2002S0L
Description Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm
Is it Rohs certified? conform to conform to
Maker Panasonic Panasonic
package instruction HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B-B, SC-59A, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B-B, SC-59A, 3 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 170
JEDEC-95 code TO-236AA TO-236AA
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 160 MHz 160 MHz

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2555  2828  2756  2673  2719  52  57  56  54  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号