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ZXMN6A11DN8TC

Description
MOSFET Dl 30V N Chnl UMOS
CategoryDiscrete semiconductor    The transistor   
File Size637KB,8 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZXMN6A11DN8TC Overview

MOSFET Dl 30V N Chnl UMOS

ZXMN6A11DN8TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)2.1 A
Maximum drain current (ID)2.1 A
Maximum drain-source on-resistance0.14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.0021 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.120 @ V
GS
= 10V
0.180 @ V
GS
= 4.5V
I
D
(A)
3.2
2.6
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
D1
D2
G1
S1
G2
S2
Applications
DC-DC converters
Power management functions
Motor control
S1
G1
D1
D1
D2
D2
Pin out - top view
Ordering information
Device
ZXMN6A11DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S2
G2
Device marking
ZXMN
6A11D
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
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