DMP6023LFG
60V P-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
-60V
R
DS(ON)
max
25mΩ @ V
GS
= -10V
33mΩ @ V
GS
= -4.5V
I
D
max
T
A
= +25°C
-7.7A
-6.8A
Features and Benefits
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: POWERDI
®
3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
POWERDI3333-8
S
S
Pin 1
S
G
D
G
D
D
D
D
S
Top View
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMP6023LFG-7
DMP6023LFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P23= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 ~ 53)
P23
POWERDI is a registered trademark of Diodes Incorporated.
YYWW
DMP6023LFG
Document number: DS37204 Rev. 2 - 2
1 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
-60
±20
-7.7
-6.2
-10.3
-8.2
-55
-2.2
-35.5
62.9
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.0
123
69
2.1
60
34
6.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V,)
Total Gate Charge (V
GS
= -10V),
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-60
—
—
-1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
-0.7
2569
179
143
8
26.5
53.1
7.1
12.6
6
7.1
110
62
20
14
Max
—
-1
±100
-3
25
33
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
V
GS
= 0V, I
S
= -1A
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -30V, I
D
= -5A
V
GS
= -10V, V
DS
= -30V,
R
G
= 3Ω, I
D
= -5A
I
F
= -5A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFG
Document number: DS37204 Rev. 2 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LFG
30.0
V
GS
= -10V
V
GS
= -5.0V
30
V
GS
= -3.5V
V
DS
= -5.0V
25.0
V
GS
= -4.5V
25
I
D
, DRAIN CURRENT (A)
ADVANCE INFORMATION
I
D
, DRAIN CURRENT (A)
20.0
V
GS
= -4.0V
20
15.0
15
10.0
V
GS
= -3.0V
10
T
A
= 150
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
5.0
V
GS
= -2.8V
5
T
A
= 125
C
0.0
0
1
2
3
4
V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
0
0.5
1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.04
0.035
0.03
V
GS
= -4.5V
0.2
0.18
0.16
I
D
= -4.0A
I
D
= -5.0A
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
4
6
8 10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2
0.025
0.02
0.015
0.01
0.005
0
V
GS
= -10V
0
5
10
15
20
25
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
V
GS
= -4.5V
T
A
= 125
C
T
A
= 85
C
T
A
= 150
C
2
1.8
0.04
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
V
GS
= -4.5V
I
D
= -5A
0.03
T
A
= 25
C
0.02
T
A
= -55
C
0.01
0
0
5
10
15
20
25
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFG
Document number: DS37204 Rev. 2 - 2
3 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= -4.5V
I
D
= -5A
3
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
ADVANCE INFORMATION
-I
D
= 1mA
-I
D
= 250µA
0
-50
30
25
C
T
, JUNCTION CAPACITANCE (pF)
I
S
, SOURCE CURRENT (A)
C
iss
20
15
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
1000
10
C
oss
5
C
rss
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
100
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
9
100
R
DS(on)
Limited
V
GS
, GATE-SOURCE VOLTAGE (V)
8
7
6
5
4
3
2
1
0
0
5
10 15 20 25 30 35 40 45 50 55
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
V
DS
= -30V
I
D
= -5A
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
0.1
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= -10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 1ms
P
W
= 100µs
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFG
Document number: DS37204 Rev. 2 - 2
4 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LFG
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 127°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
100
1000
0.001
1E-04
0.001
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
A
A3
A1
D
D2
L
(4x)
Pin 1 ID
E
E2
8
5
1
4
b2
(4x)
L1
(3x)
Z (4x)
e
b (8x)
POWERDI
®
3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2
2.22 2.32 2.27
E2
1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
b
0.27 0.37 0.32
b2
0.20
L
0.35 0.45 0.40
L1
0.39
e
0.65
Z
0.515
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
8
Y2
G1
5
Y1
Y
1
Y3
X2
C
4
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFG
Document number: DS37204 Rev. 2 - 2
5 of 6
www.diodes.com
January 2015
© Diodes Incorporated
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