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BLD6G22LS-50,112

Description
RF MOSFET Transistors TRANS DOHERTY W/CDMA
CategoryDiscrete semiconductor    The transistor   
File Size1003KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLD6G22LS-50,112 Overview

RF MOSFET Transistors TRANS DOHERTY W/CDMA

BLD6G22LS-50,112 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
Parts packaging codeDFM
Contacts4
Manufacturer packaging codeSOT1130B
Reach Compliance Codecompliant
Base Number Matches1
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty
transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using
Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for
CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main
and peak device, input splitter and output combiner are integrated in a single package.
This package consists of one gate and drain lead and two extra leads of which one is used
for biasing the peak amplifier and the other is not connected. It only requires the proper
input/output match and bias setting as with a normal class-AB transistor.
Table 1.
Typical performance
RF performance at T
h
= 25
C.
Mode of operation
W-CDMA
[1][2]
[1]
[2]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
8
G
p
(dB)
14
D
(%)
40
ACPR
(dBc)
30
P
L(3dB)
(W)
55
Test signal: 2-carrier W-CDMA; test model 1; 64 DPCH; PAR = 8.3 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
I
Dq
= 170 mA (main); V
GS(amp)peak
= 0 V.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz:
Average output power = 8 W
Power gain = 14 dB
Efficiency = 40 %
Fully optimized integrated Doherty concept:
integrated asymmetrical power splitter at input
integrated power combiner
peak biasing down to 0 V
low junction temperature
high efficiency

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