DTC124TKAT146 datasheet, PDF - EEWORLD Datasheet

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DTC124TKAT146: DescriptionBipolar Transistors - Pre-Biased NPN 50V 100MA; CategoryDiscrete semiconductor The transistor; File Size1MB，9 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DTC124TKAT146 Overview

Bipolar Transistors - Pre-Biased NPN 50V 100MA

DTC124TKAT146 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN SILVER COPPER
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V

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DTC124T series

NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

Datasheet

Outline

Parameter

CEO

Value

50V

100mA

22kΩ

VMT3

EMT3

Features

1) Built-In Biasing Resistor

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit) .

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

completely eliminating parasitic effects.

4) Only the on/off conditions need to be set

for operation, making the circuit design easy.

5) Complementary PNP Types: DTA124T series

6) Lead Free/RoHS Compliant.

Driver circuit

Application

Switching circuit, Inverter circuit, Interface circuit,

Packaging specifications

Part No.

DTC124TM

DTC124TE

DTC124TUA

DTC124TKA

ew om

es en

ig de

ns d

DTC124TM

(SC-105AA)

UMT3

SMT3

DTC124TE

SOT-416(SC-75A)

DTC124TUA

SOT-323(SC-70)

DTC124TKA

SOT-346(SC-59)

Inner circuit

B: BASE

C: COLLECTOR

E: EMITTER

Package

VMT3

EMT3

UMT3

SMT3

Package

size

1212

1616

2021

2928

Taping

code

T2L

T106

T146

Reel size Tape width

(mm)

180

Basic

ordering

unit.(pcs)

8000

3000

Marking

www.rohm.com

1/7

20121023 - Rev.001

DTC124TKAT146 Related Products

	DTC124TKAT146	DTC124TETL
Description	Bipolar Transistors - Pre-Biased NPN 50V 100MA	Bipolar Transistors - Pre-Biased NPN 50V 100MA
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor
Parts packaging code	SC-59	SC-75A
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e1	e1
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.2 W	0.15 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz
VCEsat-Max	0.3 V	0.3 V

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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