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MW5IC2030GMBR1

Description
RF LDMOS Wideband Integrated Power Amplifiers
CategoryWireless rf/communication    Radio frequency and microwave   
File Size595KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MW5IC2030GMBR1 Overview

RF LDMOS Wideband Integrated Power Amplifiers

MW5IC2030GMBR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLNG,.8\'\'H SPACE
Reach Compliance Codeunknow
Characteristic impedance50 Ω
structureCOMPONENT
Gain21.5 dB
Maximum input power (CW)20 dBm
Number of functions1
Maximum operating frequency1990 MHz
Minimum operating frequency1930 MHz
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeFLNG,.8\'\'H SPACE
power supply26 V
RF/Microwave Device TypesNARROW BAND HIGH POWER
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MW5IC2030M/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030 wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1930 to 1990 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS,
CDMA and W - CDMA.
Final Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 160 mA,
I
DQ2
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc @ 30 kHz Channel Bandwidth
Driver Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 200 mA, I
DQ2
=
550 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 64 dBc @ 30 kHz Channel Bandwidth
On - Chip Matching (50 Ohm Input, >4 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application (1)
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V
DS1
V
RD2
V
RG2
RF
in
V
RD1
V
DS2
/RF
out
MW5IC2030MBR1
MW5IC2030GMBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GMBR1
PIN CONNECTIONS
GND
V
DS1
V
RD2
V
RG2
GND
RF
in
V
RD1
V
RG1
/V
GS1
V
GS2
NC
GND
Quiescent Current
Temperature Compensation
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
V
DS2/
RF
out
V
RG1
/V
GS1
V
GS2
13
12
NC
GND
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
Functional Block Diagram
(1) Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW5IC2030MBR1 MW5IC2030GMBR1
1

MW5IC2030GMBR1 Related Products

MW5IC2030GMBR1 MW5IC2030MBR1
Description RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction FLNG,.8\'\'H SPACE FLNG,.8\'\'H SPACE
Reach Compliance Code unknow unknow
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 21.5 dB 21.5 dB
Maximum input power (CW) 20 dBm 20 dBm
Number of functions 1 1
Maximum operating frequency 1990 MHz 1990 MHz
Minimum operating frequency 1930 MHz 1930 MHz
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code FLNG,.8\'\'H SPACE FLNG,.8\'\'H SPACE
power supply 26 V 26 V
RF/Microwave Device Types NARROW BAND HIGH POWER NARROW BAND HIGH POWER
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