ZTX451STZ datasheet, PDF - EEWORLD Datasheet

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ZTX451STZ: DescriptionBipolar Transistors - BJT NPN Medium Power; CategoryDiscrete semiconductor The transistor; File Size72KB，2 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX451STZ Overview

Bipolar Transistors - BJT NPN Medium Power

ZTX451STZ Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Samacsys Description	Bipolar Transistors - BJT NPN Medium Power
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 2 MARCH 1994

FEATURES

* 60 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

ZTX450

ZTX451

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX450

60

45

5

2

1

E-Line

TO92 Compatible

ZTX451

80

60

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

100

15

150

15

3-175

60

45

5

0.1

0.25

1.1

300

50

10

150

15

ZTX450

MIN.

80

60

5

ZTX451

MAX.

V

µ

A

µ

A

µ

A

UNIT

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=45V

V

CB

=60V

V

EB

=4V

I

C

=150mA, I

B

=15mA*

I

C

=150mA, I

B

=15mA*

I

C

=150mA, V

CE

=10V*

I

C

=1A, V

CE

=10V*

MAX. MIN.

0.1

0.35

1.1

150

V

MHz

pF

I

C

=50mA, V

CE

=10V

f=100MHz

V

CB

=10V, f=1MHz

ZTX451STZ Related Products

	ZTX451STZ	ZTX451	ZTX450STZ
Description	Bipolar Transistors - BJT NPN Medium Power	Bipolar Transistors - BJT NPN Medium Power	Bipolar Transistors - BJT NPN Medium Power
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Factory Lead Time	15 weeks	15 weeks	15 weeks
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	60 V	60 V	45 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10	15
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	40
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz
Parts packaging code	TO-92	-	TO-92
Guideline	CECC	-	CECC
transistor applications	SWITCHING	-	SWITCHING

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