BF5030...
Silicon N-Channel MOSFET Tetrode
•
Designed for input stages of UHF- and
VHF-tuners with AGC function
•
Supporting 5 V operations and
power saving 3 V operations
•
Integrated ESD gate protection diodes
•
Very low noise figure
•
High gain, high forward transadmittance
•
Very good cross modulation at gain reduction
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
4
1
2
Drain
AGC
HF
Input
G2
G1
R
G1
V
GG
HF Output
+ DC
GND
EHA07461
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BF5030
BF5030R
BF5030W
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
Pin Configuration
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
Marking
KXs
KXs
KXs
1
2009-05-05
BF5030...
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
T
S
≤
94 °C, BF5030W
T
S
≤
76 °C, BF5030, BF5030R
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1)
BF5030W
BF5030, BF5030R
1
For
Symbol
V
DS
I
D
I
G1S
,
I
G2S
V
G1S
,
V
G2S
P
tot
Value
8
25
±
1
±
6
200
200
Unit
V
mA
mA
V
mW
T
stg
T
ch
Symbol
R
thchs
-55 ... 150
150
°C
Value
≤
280
≤
370
Unit
K/W
calculation of
R
thJA please refer to Application Note Thermal Resistance
2
2009-05-05
BF5030...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 20 µA,
V
G1S
= 0 ,
V
G2S
= 0
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source breakdown voltage
+I
G2S
= 10 mA,
V
G1S
= 0 ,
V
DS
= 0
Gate1-source leakage current
V
G1S
= 6 V,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source leakage current
V
G2S
= 6 V,
V
G1S
= 0 ,
V
DS
= 0
Drain current
V
DS
= 3 V,
V
G1S
= 0 ,
V
G2S
= 3 V
V
DS
= 5 V,
V
G1S
= 0 ,
V
G2S
= 4 V
Drain-source current
V
DS
= 3 V,
V
G2S
= 3 V,
R
G1
= 82 kΩ
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 180 kΩ
Gate1-source pinch-off voltage
V
DS
= 3 V,
V
G2S
= 3 V,
I
D
= 20 µA
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 20 µA
Gate2-source pinch-off voltage
V
DS
= 3 V,
V
G1S
= 3 V,
I
D
= 20 µA
V
DS
= 5 V,
V
G1S
= 4 V,
I
D
= 20 µA
V
G2S(p)
-
-
0.7
0.7
-
-
V
G1S(p)
-
-
0.7
0.7
-
-
I
DSX
-
-
13
13
-
-
V
I
DSS
-
-
-
-
100
100
mA
+I
G2SS
-
-
50
+I
G1SS
-
-
50
nA
+V
(BR)G2SS
6
-
15
+V
(BR)G1SS
6
-
15
V
(BR)DS
12
-
-
V
typ.
max.
Unit
3
2009-05-05
BF5030...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
- (verified by random sampling)
Forward transconductance
V
DS
= 3 V,
I
D
= 10 mA,
V
G2S
= 3 V
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V
Gate1 input capacitance
V
DS
= 3 V,
I
D
= 10 mA,
V
G2S
= 3 V
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V
Output capacitance
V
DS
= 3 V,
I
D
= 10 mA,
V
G2S
= 3 V
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V
Power gain
V
DS
= 3 V,
I
D
= 10 mA,
V
G2S
= 3 V,
f
= 800 MHz
V
DS
= 3 V,
I
D
= 10 mA,
V
G2S
= 3 V,
f
= 45 MHz
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 800 MHz
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 45 MHz
Noise figure
V
DS
= 3 V,
I
D
= 10 mA,
V
G2S
= 3 V,
f
= 800 MHz
V
DS
= 3 V,
I
D
= 10 mA,
V
G2S
= 3 V,
f
= 45 MHz
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 800 MHz
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 45 MHz
Gain control range
V
DS
= 3 V,
V
G2S
= 3...0 V ,
f
= 800 MHz
V
DS
= 5 V,
V
G2S
= 4...0 V ,
f
= 800 MHz
Cross-modulation
k=1%, f
w
=50MHz,
f
unw
=60MHz
X
mod
AGC
= 0
AGC
= 10 dB
AGC
= 40 dB
∆G
p
45
45
90
-
96
50
50
94
92
98
-
-
dB
-
-
-
F
-
-
-
-
1.3
0.9
1.3
0.9
-
-
-
-
G
p
-
-
-
-
24
34
24
34
-
-
-
-
dB
C
dss
-
-
1.6
1.5
-
-
dB
C
g1ss
-
-
2.7
2.8
-
-
g
fs
-
-
41
41
-
-
pF
mS
typ.
max.
Unit
4
2009-05-05
BF5030...
Total power dissipation
P
tot
=
ƒ(T
S
)
BF5030W
Total power dissipation
P
tot
=
ƒ(T
S
)
BF5030, BF5030R
220
mA
220
mW
180
160
180
160
P
tot
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
P
tot
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Drain current
I
D
=
ƒ(I
G1
)
V
DS
= 3 V,
V
G2S
= 3 V
…
V
DS
= 5 V,
V
G2S
= 4 V
35
mA
Output characteristics
I
D
=
ƒ(V
DS
)
V
G1S
= Parameter
V
DS
= 3 V,
…
V
DS
= 5 V
22
mA
1.4V
1.4V
1.3V
18
25
16
I
D
I
D
14
12
10
8
1.2V
1.2V
1.3V
20
15
10
6
4
2
1V
1V
5
0
0
10
20
30
µA
50
0
0
2
4
6
8
V
12
I
G1
V
DS
5
2009-05-05
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