EEWORLDEEWORLDEEWORLD

Part Number

Search

MRF6V12250HSR3

Description
RF MOSFET Transistors VHV6 250W 50V NI780HS
CategoryDiscrete semiconductor    The transistor   
File Size1MB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

MRF6V12250HSR3 Online Shopping

Suppliers Part Number Price MOQ In stock  
MRF6V12250HSR3 - - View Buy Now

MRF6V12250HSR3 Overview

RF MOSFET Transistors VHV6 250W 50V NI780HS

MRF6V12250HSR3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionFLATPACK, R-CDFP-F2
Contacts2
Manufacturer packaging codeCASE 465A-06
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage110 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeR-CDFP-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
Document Number: MRF6V12250H
Rev. 2, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulsed
applications.
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 100 mA, P
out
=
275 Watts Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128
μ
sec,
Duty Cycle = 10%
Power Gain — 20.3 dB
Drain Efficiency — 65.5%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak
Power
Typical Broadband Performance: V
DD
= 50 Volts, I
DQ
= 100 mA, P
out
=
250 Watts Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =
128
μ
sec, Duty Cycle = 10%
Power Gain — 19.8 dB
Drain Efficiency — 58%
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6V12250HR3
MRF6V12250HSR3
960-
-1215 MHz, 275 W, 50 V
PULSED
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465-
-06, STYLE 1
NI-
-780
MRF6V12250HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6V12250HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +100
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 275 W Pulsed, 128
μsec
Pulse Width, 10% Duty Cycle
Symbol
Z
θJC
Value
(2,3)
0.08
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MRF6V12250HR3 MRF6V12250HSR3
1
RF Device Data
Freescale Semiconductor
MOS tube characteristics and single class A power amplifier issues
MOS tube (MOS tube is a voltage-controlled device (transistor is a current-controlled device), its characteristics are more like electron tube, it has high input impedance, large power gain, and low n...
Jacktang Analogue and Mixed Signal
Can you explain I2C fast mode (400k)?
[table=98%,rgb(239, 245, 249)] [tr][td] [/td][/tr] [/table][backcolor=rgb(239, 245, 249)]What are the disadvantages of fast mode 400k? I don't think it is often used. I am planning to use it. What are...
kenhgt stm32/stm8
DM814x YUV422 input color is not normal
[b]DM814x parallel port YCbCr422, 16-bit input, the image turns from black to green, and from white to purple. What is the reason? Please give me an answer. How to solve it? I would be very grateful! ...
jiger TI Technology Forum
Urgent question: GTM900B GPRS module debugging problem
I have been tuning the GPRS module for more than a week. I have tried all kinds of methods but it still doesn't work. I am here to ask experts for answers. The problem is this: I use the GTM900B modul...
huaihuaiybyb Embedded System
About EMC testing components
[align=left][b][font=微软雅黑]Hello, if you need[/font] an anti-interference product with EMC certification, please contact me. Thank you. [/b][/align][align=left][font=宋体]Liu Yumei[/font] Salesman[/align...
liuyumei66 LED Zone
What are the functions of CD1 and CD2 of TORNADO respectively?
The tornado installation image ISO file downloaded from the Internet (from verycd) has two files, CD1 and CD2. What are CD1 and CD2 used for? It seems that after CD1 is installed, it will be the torna...
yejin Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1287  1594  2486  562  1569  26  33  51  12  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号