BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
Rev. 05 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include internal gate resistors and
TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated gate resistor
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
I
D
P
tot
Quick reference
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[2]
Min
-
-
Typ
-
-
Max
89
172
Unit
A
W
drain current
total power
dissipation
drain-source
on-state resistance
Symbol Parameter
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 30 A;
T
j
= 25 °C; see
Figure 14;
see
Figure 6
-
8
11
mΩ
[1]
[2]
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
NXP Semiconductors
BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
G
mb
D
Simplified outline
Graphic symbol
S
mbl521
1 2 3
SOT78C
(TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK7L11-34ARC TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-leads
Version
SOT78C
BUK7L11-34ARC_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 17 February 2009
2 of 15
NXP Semiconductors
BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
I
DG(CL)
I
GS(CL)
T
stg
T
j
I
S
I
SM
E
DS(CL)S
peak drain current
total power dissipation
drain-gate clamping
current
gate-source clamping
current
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source clamping
energy
electrostatic discharge
voltage
[1]
[2]
[3]
[4]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
[1]
[1]
[2][3]
[4]
Min
-
-
-20
-
-
-
-
-
-
-
continuous
-
-55
-55
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 60 A; V
DS
≤
34 V; V
GS
= 10 V; R
GS
= 50
Ω;
unclamped; T
j(init)
= 25 °C
[2][3]
[4]
Avalanche ruggedness
-
465
mJ
-
-
-
Max
34
34
20
89
75
63
358
172
50
50
10
175
175
89
75
358
Unit
V
V
V
A
A
A
A
W
mA
mA
mA
°C
°C
A
A
A
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 2
pulsed; t
p
= 5 ms;
δ
= 0.01
Source-drain diode
Electrostatic discharge
V
esd
HBM; C = 250 pF; R = 1.5 kΩ
HBM; C = 100 pF; R = 1.5 kΩ
-
-
6
8
kV
kV
Voltage is limited by clamping.
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
Continuous current is limited by package.
BUK7L11-34ARC_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 17 February 2009
3 of 15
NXP Semiconductors
BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
100
I
D
(A)
80
(1)
03nj52
120
P
der
(%)
80
03na19
60
40
40
20
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
(1) Capped at 75 A due to package
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03nj50
10
3
I
D
(A)
10
2
(1)
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
1 ms
10
DC
10 ms
100 ms
1
1
10
V
DS
(V)
10
2
(1) Capped at 75 A due to package
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7L11-34ARC_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 17 February 2009
4 of 15
NXP Semiconductors
BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting base
Conditions
vertical in free air
see
Figure 4
Min
-
-
Typ
60
0.55
Max
-
0.87
Unit
K/W
K/W
1
δ
= 0.5
03nj51
Z
th(j-mb)
(K/W)
10
-1
0.2
0.1
0.05
0.02
P
single shot
t
p
T
t
δ
=
t
p
T
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7L11-34ARC_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 17 February 2009
5 of 15
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