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BSP78HUMA1

Description
Power Switch ICs - Power Distribution SMART LW SIDE PWR 42V 3A
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size263KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP78HUMA1 Overview

Power Switch ICs - Power Distribution SMART LW SIDE PWR 42V 3A

BSP78HUMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOT-223
package instructionSOP,
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time18 weeks
Built-in protectionTRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
Interface integrated circuit typeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 codeR-PDSO-G4
JESD-609 codee3
length6.5 mm
Humidity sensitivity level3
Number of functions1
Number of terminals4
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Output current flow directionSINK
Nominal output peak current4 A
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.8 mm
Nominal supply voltage12 V
surface mountYES
technologyMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch2.3 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Disconnect time100 µs
connection time100 µs
width3.5 mm
Smart Low Side Power Switch
HITFET BSP 78
Features
·
Logic Level Input
·
Input Protection (ESD)
·
Thermal shutdown with
auto restart
Green product (RoHS compliant)
·
Overload protection
·
Short circuit protection
·
Overvoltage protection
·
Current limitation
·
Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(Nom)
E
AS
4
42
50
3
500
V
mW
A
mJ
3
2
1
VPS05163
Application
·
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
·
µC compatible power switch for 12 V DC applications
·
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
V
bb
M
HITFET
â
Current
Limitation
In
Pin 1
Drain
Pin 2 and 4 (TAB)
Overvoltage-
Protection
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Pin 3
Source
Complete product spectrum and additional information http://www.infineon.com/hitfet
Datasheet
1
Rev. 1.3, 2008-04-14

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