FDY6342L Integrated Load Switch
November 2014
FDY6342L
Integrated Load Switch
Features
Max r
DS(on)
= 0.5
Ω
at V
GS
= 4.5 V, I
D
= –0.83 A
Max r
DS(on)
= 0.7
Ω
at V
GS
= 2.5 V, I
D
= –0.70 A
Max r
DS(on)
= 1.2
Ω
at V
GS
= 1.8 V, I
D
= –0.43 A
Max r
DS(on)
= 1.8
Ω
at V
GS
= 1.5 V, I
D
= –0.36 A
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness (>4 kV Human body model)
High performance trench technology for extremely low r
DS(on)
Compact industry standard SC89-6 surface mount package
RoHS Compliant
tm
General Description
This device is particularly suited for compact power
management in portable electronic equipment where 2.5 V to
8 V input and 0.83 A output current capability are needed. This
load switch integrates a small N-Channel power MOSFET (Q1)
that drives a large P-Channel power MOSFET (Q2) in one tiny
SC89-6 package.
Applications
Power management
Load switch
Q2
6
5
4
Vin,R1
4
3
Vout,C1
IN
Equivalent Circuit
V
DROP
OUT
ON/OFF
5
Q1
6
2
1
NC
R2
1
2
3
SC89-6
R1,C1
ON/OFF
See Application Circuit
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
IN
V
ON/OFF
I
Load
P
D
T
J
, T
STG
Gate to Source Voltage (Q2)
Gate to Source Voltage (Q1)
Load Current
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 2)
(Note 2)
(Note 1a)
(Note 1b)
Parameter
Ratings
±8
–0.5 to 8
0.83
1.0
0.625
0.446
–55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
200
280
°C/W
Package Marking and Ordering Information
Device Marking
H
Device
FDY6342L
Package
SC89-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
1
www.fairchildsemi.com
FDY6342L Integrated Load Switch
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
IN
I
Load
I
FL
I
RL
V
IN
Breakdown Voltage
Zero Gate Voltage Drain Current
Leakage Current, Forward
Leakage Current, Reverse
I
D
= –250
µA,
V
ON/OFF
= 0 V
V
IN
= –6.4 V, V
ON/OFF
= 0 V
V
IN
= 8 V, V
ON/OFF
= 0 V
V
IN
= –8 V, V
ON/OFF
= 0 V
8
–1
10
–10
V
µA
µA
µA
On Characteristics
(note 2)
V
ON/OFF(th)
Gate Threshold Voltage
V
IN
= V
ON/OFF
, I
D
= –250
µA
V
IN
= 4.5 V, I
D
= –0.83 A
r
DS(on)
Static Drain to Source On Resistance (Q2)
V
IN
= 2.5 V, I
D
= –0.70 A
V
IN
= 1.8 V, I
D
= –0.43 A
V
IN
= 1.5 V, I
D
= –0.36 A
Static Drain to Source On Resistance (Q1)
V
IN
= 4.5 V, I
D
= 0.4 A
V
IN
= 2.7 V, I
D
= 0.2 A
0.65
0.85
0.28
0.35
0.45
0.57
2.9
3.5
1.5
0.5
0.7
1.2
1.8
4.0
5.0
Ω
Ω
V
Drain-Source Diode Characteristics
I
S
V
SD
Maximum Continuous Drain to Source Diode Forward Current
Source to Drain Diode Forward Voltage
V
ON/OFF
= 0 V, I
S
= –0.25 A (Note 2)
–0.8
–0.25
–1.2
A
V
NOTES:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θJA
is determined by
the user's board design.
a)200
o
C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b)280
o
C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300
µs,
Duty cycle < 2.0%.
FDY6342L Load Switch Application circuit
IN
Q2
C1
R1
Q1
ON/OFF
LOAD
OUT
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
2
www.fairchildsemi.com
FDY6342L Integrated Load Switch
Typical Characteristics
T
J
= 25 °C unless otherwise noted
0.5
V
IN
= -1.5 V
0.5
V
IN
= -1.8 V
V
ON/OFF
= 1.5-8 V
PW = 300
µ
s
,
D < 2%
-V
DROP, (V)
0.4
0.3
0.4
0.3
V
ON/OFF
= 1.5-8 V
PW = 300
µ
s
,
D < 2%
-V
DROP, (V)
T
J
=
125
o
C
T
J
= 125
o
C
0.2
T
J
= 25
o
C
0.2
0.1
0.0
0.0
T
J
= 25
o
C
0.1
0.0
0.0
0.2
0.4
-I
L,
(A)
0.6
0.8
0.2
0.4
-I
L,
(A)
0.6
0.8
1.0
Figure 1. Conduction Voltage Drop
Variation with Load Current
0.5
V
IN
= -2.5 V
Figure 2. Conduction Voltage Drop
Variation with Load Current
0.5
V
IN
= -4.5 V
0.4
0.3
V
ON/OFF
= 1.5-8 V
PW = 300
µ
s
,
D < 2%
0.4
0.3
V
ON/OFF
= 1.5-8 V
PW = 300
µ
s
,
D < 2%
-V
DROP, (V)
T
J
= 125
o
C
-V
DROP, (V)
T
J
= 125
o
C
0.2
T
J
= 25
o
C
0.2
T
J
= 25
o
C
0.1
0.0
0.0
0.1
0.0
0.0
0.4
0.8
-I
L
(A)
1.2
1.6
0.4
0.8
-I
L
(A)
1.2
1.6
2.0
Figure 3. Conduction Voltage Drop
Variation with Load Current
1.0
0.8
0.6
T
J
= 25
o
C
Figure 4. Conduction Voltage Drop
Variation with Load Current
1.0
0.8
0.6
T
J
= 25
o
C
T
J
= 125
o
C
r
DS(on),
ON-RESISTANCE
(
Ω
)
T
J
= 125
o
C
0.4
0.2
0.0
1.0
I
L
= -0.7A
V
ON/OFF
= 1.5-8 V
PW = 300
µ
s
,
D < 2%
r
DS(on),
ON-RESISTANCE
(
Ω
)
0.4
0.2
0.0
1.0
I
L
= -0.83 A
V
ON/OFF
= 1.5-8 V
PW = 300
µ
s
,
D < 2%
1.5
2.0
2.5
3.0
3.5
4.0
1.5
2.0
2.5
3.0
3.5
4.0
-V
IN,
INPUT VOLTAGE (A)
-V
IN,
INPUT VOLTAGE (A)
Figure 5. On- Resistance Variaton
with Input Current
Figure 6. On- Resistance Variaton
with Input Current
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
3
www.fairchildsemi.com
FDY6342L Integrated Load Switch
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative / In Design
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Rev. I72
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
5
www.fairchildsemi.com
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