Operating Junction Temperature Range ......... -40NC to +150NC
Storage Temperature Range............................ -55NC to +135NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
MIRIN
= 2.97V to 76V, T
A
= -40NC to +85NC, unless otherwise noted.)
PARAMETER
MIRIN Voltage
MIRIN Current
Diode Forward Current
Diode Forward Voltage
MIROUT Current Limit
MIROUT Series Resistance
MIR to MIROUT Ratio
Power-Supply Rejection Ratio
MIR Current Rise Time
(20%/80%)
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Note
Note
Note
Note
1:
2:
3:
4:
SYMBOL
V
MIRIN
I
MIRIN
I
DF
V
DF
I
MIROUT
R
AGC
K
MIR
(DI
MIR
/I
MIR
)
/DV
MIRIN
t
RC
T
SHDN
T
HYST
I
DF
= 100FA, T
A
= +25NC
I
DF
= 5mA, T
A
= +25NC
DS3920T-001 version, T
A
= +25NC
DS3920T-002 version, T
A
= +25NC
(Note 1)
1FA to 2.5mA
I
MIROUT
> 2.5mA
V
MIRIN
= 3V (Note 2)
V
MIRIN
= 30V or 60V (Notes 2, 3)
(Note 4)
(Note 3)
(Note 3)
10
2.8
100
0.190
0.180
0.200
0.200
4800
100
30
+150
20
0.210
0.220
15,000
500
20
4.4
0.6
1.25
40
8
I
MIROUT
= 2.5mA
CONDITIONS
MIN
2.97
TYP
MAX
76
4.4
5
UNITS
V
mA
mA
V
mA
W
A/A
ppm/V
ns
NC
NC
See the
Typical Application Circuit.
1V DC change applied to MIRIN; 100FA at MIROUT; 4.99kI load to ground on MIR.
Guaranteed by design; not production tested.
Rising MIROUT transition from 10FA to 1mA; 15V < V
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